JPS52149076A - Semiconductor integrated circuit and its preparing method - Google Patents
Semiconductor integrated circuit and its preparing methodInfo
- Publication number
- JPS52149076A JPS52149076A JP6451376A JP6451376A JPS52149076A JP S52149076 A JPS52149076 A JP S52149076A JP 6451376 A JP6451376 A JP 6451376A JP 6451376 A JP6451376 A JP 6451376A JP S52149076 A JPS52149076 A JP S52149076A
- Authority
- JP
- Japan
- Prior art keywords
- integrated circuit
- semiconductor integrated
- preparing method
- semiconductor
- ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Element Separation (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE: To permit insulating separation of an element by making use of an insulating layer provided inside a single crystal semiconductor by ion-injection method, which layer is positioned in parallel to and followed closely by the surface of the semiconductor.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6451376A JPS52149076A (en) | 1976-06-04 | 1976-06-04 | Semiconductor integrated circuit and its preparing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6451376A JPS52149076A (en) | 1976-06-04 | 1976-06-04 | Semiconductor integrated circuit and its preparing method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS52149076A true JPS52149076A (en) | 1977-12-10 |
Family
ID=13260352
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6451376A Pending JPS52149076A (en) | 1976-06-04 | 1976-06-04 | Semiconductor integrated circuit and its preparing method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS52149076A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57104239A (en) * | 1980-12-22 | 1982-06-29 | Nippon Telegr & Teleph Corp <Ntt> | Forming method for insulating layer |
JPS582059A (en) * | 1981-06-26 | 1983-01-07 | Nec Corp | Integrated circuit |
JPS58132957A (en) * | 1982-02-02 | 1983-08-08 | Nippon Telegr & Teleph Corp <Ntt> | Preparation of multilayer semiconductor device |
JPS6080279A (en) * | 1983-10-08 | 1985-05-08 | Nippon Telegr & Teleph Corp <Ntt> | Insulated gate type transistor |
WO2012177934A3 (en) * | 2011-06-22 | 2013-02-28 | Peregrine Semiconductor Corporation | Integrated circuits with components on both sides of a selected substrate and methods of fabrication |
-
1976
- 1976-06-04 JP JP6451376A patent/JPS52149076A/en active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57104239A (en) * | 1980-12-22 | 1982-06-29 | Nippon Telegr & Teleph Corp <Ntt> | Forming method for insulating layer |
JPS582059A (en) * | 1981-06-26 | 1983-01-07 | Nec Corp | Integrated circuit |
JPS58132957A (en) * | 1982-02-02 | 1983-08-08 | Nippon Telegr & Teleph Corp <Ntt> | Preparation of multilayer semiconductor device |
JPS6080279A (en) * | 1983-10-08 | 1985-05-08 | Nippon Telegr & Teleph Corp <Ntt> | Insulated gate type transistor |
WO2012177934A3 (en) * | 2011-06-22 | 2013-02-28 | Peregrine Semiconductor Corporation | Integrated circuits with components on both sides of a selected substrate and methods of fabrication |
JP2014523644A (en) * | 2011-06-22 | 2014-09-11 | ペレグリン セミコンダクター コーポレイション | Integrated circuit having components on both sides of selected substrate and method for manufacturing the same |
US9947688B2 (en) | 2011-06-22 | 2018-04-17 | Psemi Corporation | Integrated circuits with components on both sides of a selected substrate and methods of fabrication |
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