JPS53114685A - Manufacture for semiconductor device - Google Patents

Manufacture for semiconductor device

Info

Publication number
JPS53114685A
JPS53114685A JP2859977A JP2859977A JPS53114685A JP S53114685 A JPS53114685 A JP S53114685A JP 2859977 A JP2859977 A JP 2859977A JP 2859977 A JP2859977 A JP 2859977A JP S53114685 A JPS53114685 A JP S53114685A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor device
deteriorating
aligning
accuracy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2859977A
Other languages
Japanese (ja)
Other versions
JPS5741101B2 (en
Inventor
Sunao Shibata
Nozomi Harada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP2859977A priority Critical patent/JPS53114685A/en
Priority to US05/831,393 priority patent/US4140547A/en
Publication of JPS53114685A publication Critical patent/JPS53114685A/en
Publication of JPS5741101B2 publication Critical patent/JPS5741101B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • Element Separation (AREA)
  • Weting (AREA)

Abstract

PURPOSE: To manufacture the semiconductor device with increasing the accuracy in size and without deteriorating the performance of element, by self-aligning the part to become the element on the substrate and the field part separating the elements, with a simple manufacturing process.
COPYRIGHT: (C)1978,JPO&Japio
JP2859977A 1976-09-09 1977-03-17 Manufacture for semiconductor device Granted JPS53114685A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2859977A JPS53114685A (en) 1977-03-17 1977-03-17 Manufacture for semiconductor device
US05/831,393 US4140547A (en) 1976-09-09 1977-09-08 Method for manufacturing MOSFET devices by ion-implantation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2859977A JPS53114685A (en) 1977-03-17 1977-03-17 Manufacture for semiconductor device

Publications (2)

Publication Number Publication Date
JPS53114685A true JPS53114685A (en) 1978-10-06
JPS5741101B2 JPS5741101B2 (en) 1982-09-01

Family

ID=12253044

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2859977A Granted JPS53114685A (en) 1976-09-09 1977-03-17 Manufacture for semiconductor device

Country Status (1)

Country Link
JP (1) JPS53114685A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5633841A (en) * 1979-08-29 1981-04-04 Sony Corp Manufacture of semiconductor device
JPS56113509U (en) * 1980-02-01 1981-09-01
JPS5763522U (en) * 1980-09-27 1982-04-15
JPS5775440A (en) * 1980-10-28 1982-05-12 Toshiba Corp Manufacture of semiconductor device
JPS62271450A (en) * 1987-04-24 1987-11-25 Hitachi Ltd Manufacture of semiconductor device
JPH033244A (en) * 1989-05-30 1991-01-09 Shin Etsu Handotai Co Ltd Heat treatment method for semiconductor silicon substrate
US5316965A (en) * 1993-07-29 1994-05-31 Digital Equipment Corporation Method of decreasing the field oxide etch rate in isolation technology
US5342803A (en) * 1993-02-03 1994-08-30 Rohm, Co., Ltd. Method for isolating circuit elements for semiconductor device

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5633841A (en) * 1979-08-29 1981-04-04 Sony Corp Manufacture of semiconductor device
JPS6227539B2 (en) * 1979-08-29 1987-06-15 Sony Corp
JPS56113509U (en) * 1980-02-01 1981-09-01
JPS5763522U (en) * 1980-09-27 1982-04-15
JPS6038424Y2 (en) * 1980-09-27 1985-11-16 遠藤商事株式会社 coffee filtration stand
JPS5775440A (en) * 1980-10-28 1982-05-12 Toshiba Corp Manufacture of semiconductor device
JPH0311090B2 (en) * 1980-10-28 1991-02-15 Tokyo Shibaura Electric Co
JPS62271450A (en) * 1987-04-24 1987-11-25 Hitachi Ltd Manufacture of semiconductor device
JPH033244A (en) * 1989-05-30 1991-01-09 Shin Etsu Handotai Co Ltd Heat treatment method for semiconductor silicon substrate
US5342803A (en) * 1993-02-03 1994-08-30 Rohm, Co., Ltd. Method for isolating circuit elements for semiconductor device
US5316965A (en) * 1993-07-29 1994-05-31 Digital Equipment Corporation Method of decreasing the field oxide etch rate in isolation technology

Also Published As

Publication number Publication date
JPS5741101B2 (en) 1982-09-01

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