JPS5333053A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5333053A
JPS5333053A JP10727276A JP10727276A JPS5333053A JP S5333053 A JPS5333053 A JP S5333053A JP 10727276 A JP10727276 A JP 10727276A JP 10727276 A JP10727276 A JP 10727276A JP S5333053 A JPS5333053 A JP S5333053A
Authority
JP
Japan
Prior art keywords
semiconductor device
production
letting
align
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10727276A
Other languages
Japanese (ja)
Other versions
JPS5524693B2 (en
Inventor
Sunao Shibata
Nozomi Harada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP10727276A priority Critical patent/JPS5333053A/en
Priority to US05/831,393 priority patent/US4140547A/en
Publication of JPS5333053A publication Critical patent/JPS5333053A/en
Publication of JPS5524693B2 publication Critical patent/JPS5524693B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Element Separation (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To produce a semiconductor device by letting element portions and isolating field portions self-align on a substrate, improving dimensional accuracy and further without degrading electrical characteristics with simple production processes.
COPYRIGHT: (C)1978,JPO&Japio
JP10727276A 1976-09-09 1976-09-09 Production of semiconductor device Granted JPS5333053A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP10727276A JPS5333053A (en) 1976-09-09 1976-09-09 Production of semiconductor device
US05/831,393 US4140547A (en) 1976-09-09 1977-09-08 Method for manufacturing MOSFET devices by ion-implantation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10727276A JPS5333053A (en) 1976-09-09 1976-09-09 Production of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5333053A true JPS5333053A (en) 1978-03-28
JPS5524693B2 JPS5524693B2 (en) 1980-07-01

Family

ID=14454845

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10727276A Granted JPS5333053A (en) 1976-09-09 1976-09-09 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5333053A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57188866A (en) * 1981-05-18 1982-11-19 Hitachi Ltd Manufacture of semiconductor device
JPS5840838A (en) * 1981-09-03 1983-03-09 Toshiba Corp Manufacture of semiconductor device
JPS58123722A (en) * 1982-01-19 1983-07-23 Sumitomo Electric Ind Ltd Impurity doping method onto semiconductor crystal
JPS58123721A (en) * 1982-01-19 1983-07-23 Sumitomo Electric Ind Ltd Impurity doping method onto semiconductor crystal
JPS58124227A (en) * 1982-01-20 1983-07-23 Sumitomo Electric Ind Ltd Doping method for impurity to semiconductor crystal
JPS58161327A (en) * 1982-03-02 1983-09-24 テキサス・インスツルメンツ・インコ−ポレイテツド Method of producing integrated circuit device for directly performing mode insulation in anisotropic etching step
US5004701A (en) * 1988-01-29 1991-04-02 Nec Corporation Method of forming isolation region in integrated circuit semiconductor device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57188866A (en) * 1981-05-18 1982-11-19 Hitachi Ltd Manufacture of semiconductor device
JPH0328071B2 (en) * 1981-05-18 1991-04-17 Hitachi Ltd
JPS5840838A (en) * 1981-09-03 1983-03-09 Toshiba Corp Manufacture of semiconductor device
JPS58123722A (en) * 1982-01-19 1983-07-23 Sumitomo Electric Ind Ltd Impurity doping method onto semiconductor crystal
JPS58123721A (en) * 1982-01-19 1983-07-23 Sumitomo Electric Ind Ltd Impurity doping method onto semiconductor crystal
JPS58124227A (en) * 1982-01-20 1983-07-23 Sumitomo Electric Ind Ltd Doping method for impurity to semiconductor crystal
JPS58161327A (en) * 1982-03-02 1983-09-24 テキサス・インスツルメンツ・インコ−ポレイテツド Method of producing integrated circuit device for directly performing mode insulation in anisotropic etching step
US5004701A (en) * 1988-01-29 1991-04-02 Nec Corporation Method of forming isolation region in integrated circuit semiconductor device

Also Published As

Publication number Publication date
JPS5524693B2 (en) 1980-07-01

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