JPS5333053A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS5333053A JPS5333053A JP10727276A JP10727276A JPS5333053A JP S5333053 A JPS5333053 A JP S5333053A JP 10727276 A JP10727276 A JP 10727276A JP 10727276 A JP10727276 A JP 10727276A JP S5333053 A JPS5333053 A JP S5333053A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- production
- letting
- align
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Element Separation (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE: To produce a semiconductor device by letting element portions and isolating field portions self-align on a substrate, improving dimensional accuracy and further without degrading electrical characteristics with simple production processes.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10727276A JPS5333053A (en) | 1976-09-09 | 1976-09-09 | Production of semiconductor device |
US05/831,393 US4140547A (en) | 1976-09-09 | 1977-09-08 | Method for manufacturing MOSFET devices by ion-implantation |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10727276A JPS5333053A (en) | 1976-09-09 | 1976-09-09 | Production of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5333053A true JPS5333053A (en) | 1978-03-28 |
JPS5524693B2 JPS5524693B2 (en) | 1980-07-01 |
Family
ID=14454845
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10727276A Granted JPS5333053A (en) | 1976-09-09 | 1976-09-09 | Production of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5333053A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57188866A (en) * | 1981-05-18 | 1982-11-19 | Hitachi Ltd | Manufacture of semiconductor device |
JPS5840838A (en) * | 1981-09-03 | 1983-03-09 | Toshiba Corp | Manufacture of semiconductor device |
JPS58123722A (en) * | 1982-01-19 | 1983-07-23 | Sumitomo Electric Ind Ltd | Impurity doping method onto semiconductor crystal |
JPS58123721A (en) * | 1982-01-19 | 1983-07-23 | Sumitomo Electric Ind Ltd | Impurity doping method onto semiconductor crystal |
JPS58124227A (en) * | 1982-01-20 | 1983-07-23 | Sumitomo Electric Ind Ltd | Doping method for impurity to semiconductor crystal |
JPS58161327A (en) * | 1982-03-02 | 1983-09-24 | テキサス・インスツルメンツ・インコ−ポレイテツド | Method of producing integrated circuit device for directly performing mode insulation in anisotropic etching step |
US5004701A (en) * | 1988-01-29 | 1991-04-02 | Nec Corporation | Method of forming isolation region in integrated circuit semiconductor device |
-
1976
- 1976-09-09 JP JP10727276A patent/JPS5333053A/en active Granted
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57188866A (en) * | 1981-05-18 | 1982-11-19 | Hitachi Ltd | Manufacture of semiconductor device |
JPH0328071B2 (en) * | 1981-05-18 | 1991-04-17 | Hitachi Ltd | |
JPS5840838A (en) * | 1981-09-03 | 1983-03-09 | Toshiba Corp | Manufacture of semiconductor device |
JPS58123722A (en) * | 1982-01-19 | 1983-07-23 | Sumitomo Electric Ind Ltd | Impurity doping method onto semiconductor crystal |
JPS58123721A (en) * | 1982-01-19 | 1983-07-23 | Sumitomo Electric Ind Ltd | Impurity doping method onto semiconductor crystal |
JPS58124227A (en) * | 1982-01-20 | 1983-07-23 | Sumitomo Electric Ind Ltd | Doping method for impurity to semiconductor crystal |
JPS58161327A (en) * | 1982-03-02 | 1983-09-24 | テキサス・インスツルメンツ・インコ−ポレイテツド | Method of producing integrated circuit device for directly performing mode insulation in anisotropic etching step |
US5004701A (en) * | 1988-01-29 | 1991-04-02 | Nec Corporation | Method of forming isolation region in integrated circuit semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS5524693B2 (en) | 1980-07-01 |
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