JPS57188866A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57188866A
JPS57188866A JP56073546A JP7354681A JPS57188866A JP S57188866 A JPS57188866 A JP S57188866A JP 56073546 A JP56073546 A JP 56073546A JP 7354681 A JP7354681 A JP 7354681A JP S57188866 A JPS57188866 A JP S57188866A
Authority
JP
Japan
Prior art keywords
substrate
layer
capacity section
accumulated capacity
becoming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56073546A
Other languages
Japanese (ja)
Other versions
JPH0328071B2 (en
Inventor
Shinichiro Mitani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56073546A priority Critical patent/JPS57188866A/en
Publication of JPS57188866A publication Critical patent/JPS57188866A/en
Publication of JPH0328071B2 publication Critical patent/JPH0328071B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto

Abstract

PURPOSE:To prevent a variation in the electric potential of an accumulated capacity section by a method wherein a thick semiconductor oxide film formed by deposition as a part of an element isolation region on a substrate is used as a mask and an impurity is selectively induced in the substrate. CONSTITUTION:An SiO2 film 12 becoming an element isolation region is formed on a gate oxide film 11 located on a substrate 10. Boron ions are implanted by using the SiO2 film as a mask and next, arsenic is shallowly put. After annealing, a P<+>-N<+> junction is formed by a deep P<+> layer 14 and a shallow N<+> layer 15. A poly Si layer 16 becoming an electrode at the upper part of a gate is formed to complete the accumulated capacity section Cs of a memory cell. In this way, a variation in Vcc voltage is prevented as the electrode of the accumulated capacity section and a software error by alpha-rays is eliminated.
JP56073546A 1981-05-18 1981-05-18 Manufacture of semiconductor device Granted JPS57188866A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56073546A JPS57188866A (en) 1981-05-18 1981-05-18 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56073546A JPS57188866A (en) 1981-05-18 1981-05-18 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS57188866A true JPS57188866A (en) 1982-11-19
JPH0328071B2 JPH0328071B2 (en) 1991-04-17

Family

ID=13521334

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56073546A Granted JPS57188866A (en) 1981-05-18 1981-05-18 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57188866A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6022361A (en) * 1983-07-19 1985-02-04 Nec Corp Manufacture of mis type semiconductor memory device
JPS60216577A (en) * 1984-01-26 1985-10-30 ソーン、イーエムアイ、ノース、アメリカ、インコーポレーテッド Semiconductor memory structure,method of producing same and method of producing semiconductor structure
US4961165A (en) * 1987-11-17 1990-10-02 Fujitsu Limited Semiconductor memory device having a charge barrier layer for preventing soft error

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5333053A (en) * 1976-09-09 1978-03-28 Toshiba Corp Production of semiconductor device
JPS55141750A (en) * 1979-04-23 1980-11-05 Nec Corp Insulated gate type semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5333053A (en) * 1976-09-09 1978-03-28 Toshiba Corp Production of semiconductor device
JPS55141750A (en) * 1979-04-23 1980-11-05 Nec Corp Insulated gate type semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6022361A (en) * 1983-07-19 1985-02-04 Nec Corp Manufacture of mis type semiconductor memory device
JPS60216577A (en) * 1984-01-26 1985-10-30 ソーン、イーエムアイ、ノース、アメリカ、インコーポレーテッド Semiconductor memory structure,method of producing same and method of producing semiconductor structure
US4961165A (en) * 1987-11-17 1990-10-02 Fujitsu Limited Semiconductor memory device having a charge barrier layer for preventing soft error

Also Published As

Publication number Publication date
JPH0328071B2 (en) 1991-04-17

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