JPS57201083A - Manufacture of semiconductor integrated circuit device - Google Patents
Manufacture of semiconductor integrated circuit deviceInfo
- Publication number
- JPS57201083A JPS57201083A JP56086418A JP8641881A JPS57201083A JP S57201083 A JPS57201083 A JP S57201083A JP 56086418 A JP56086418 A JP 56086418A JP 8641881 A JP8641881 A JP 8641881A JP S57201083 A JPS57201083 A JP S57201083A
- Authority
- JP
- Japan
- Prior art keywords
- polycrystal silicon
- film
- type
- electrode
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 8
- 229910052710 silicon Inorganic materials 0.000 abstract 8
- 239000010703 silicon Substances 0.000 abstract 8
- 239000012535 impurity Substances 0.000 abstract 2
- 238000009413 insulation Methods 0.000 abstract 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- -1 boron ions Chemical class 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To prevent a semiconductor film from entering different conductive impurity, by making a protection film for insulation including impurity with etching speed faster than a gate insulation film. CONSTITUTION:A P type well region 2, a thick oxide region 3, a gate oxide film 4 and an N type polycrystal silicon 5 are formed on an N type silicon substrate 1. An oxide film 30 including phosphor is formed thereafter. Next, a polycrystal silicon electrode, transistor gate electrode and polycrystal silicon protection film 31, and the oxide film 30 and N type polycrystal silicon 5 are selectively etched and formed. Next, ion implantation regions 6s, 6d, 7s, 7d are formed. The polycrystal silicon protection film 31 prevents implanted boron ions from entering into the polycrystal silicon electrode and transistor gate electrode. As a result, the polycrystal silicon is prevented from increasing its sheet resistance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56086418A JPS57201083A (en) | 1981-06-04 | 1981-06-04 | Manufacture of semiconductor integrated circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56086418A JPS57201083A (en) | 1981-06-04 | 1981-06-04 | Manufacture of semiconductor integrated circuit device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57201083A true JPS57201083A (en) | 1982-12-09 |
Family
ID=13886326
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56086418A Pending JPS57201083A (en) | 1981-06-04 | 1981-06-04 | Manufacture of semiconductor integrated circuit device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57201083A (en) |
-
1981
- 1981-06-04 JP JP56086418A patent/JPS57201083A/en active Pending
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