JPS6450419A - Manufacture of complementary mos semiconductor device - Google Patents
Manufacture of complementary mos semiconductor deviceInfo
- Publication number
- JPS6450419A JPS6450419A JP62207456A JP20745687A JPS6450419A JP S6450419 A JPS6450419 A JP S6450419A JP 62207456 A JP62207456 A JP 62207456A JP 20745687 A JP20745687 A JP 20745687A JP S6450419 A JPS6450419 A JP S6450419A
- Authority
- JP
- Japan
- Prior art keywords
- thin
- conductive film
- impurity
- region
- drain regions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To prevent dielectric breakdown of a thin gate insulating film and to improve the yield rate of devices, by forming a thick conductive film in a region where ion implantation is masked, forming a thin conductive film at a part where source and drain regions are formed, connecting both conductive films, and implanting impurity ions. CONSTITUTION:A polycrystalline silicon gate electrode 105 is formed on a thin gate insulating film 106. Thereafter, the region of impurity diffused layers for the source and drain regions of a P channel and an N channel are formed by an impurity ion implanting method. At this time, a thick field oxide film 103 is formed in a region, where ion implantation is masked. A thin gate insulating film 104 is formed at a part, where the source and drain regions are formed by impurity ion implantation. Under the state the thick conductive film 103 and the thin conductive film 104 are connected, respective impurity ions are implanted. Thus, the dielectric breakdown of the gate oxide film due to charge-up is eliminated, and the yield rate of the devices is improved.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62207456A JPS6450419A (en) | 1987-08-20 | 1987-08-20 | Manufacture of complementary mos semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62207456A JPS6450419A (en) | 1987-08-20 | 1987-08-20 | Manufacture of complementary mos semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6450419A true JPS6450419A (en) | 1989-02-27 |
Family
ID=16540072
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62207456A Pending JPS6450419A (en) | 1987-08-20 | 1987-08-20 | Manufacture of complementary mos semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6450419A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005340419A (en) * | 2004-05-26 | 2005-12-08 | Kokusan Denki Co Ltd | Ignition coil for internal combustion engine and method for manufacturing the same |
-
1987
- 1987-08-20 JP JP62207456A patent/JPS6450419A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005340419A (en) * | 2004-05-26 | 2005-12-08 | Kokusan Denki Co Ltd | Ignition coil for internal combustion engine and method for manufacturing the same |
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