JPS5680171A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5680171A
JPS5680171A JP15764479A JP15764479A JPS5680171A JP S5680171 A JPS5680171 A JP S5680171A JP 15764479 A JP15764479 A JP 15764479A JP 15764479 A JP15764479 A JP 15764479A JP S5680171 A JPS5680171 A JP S5680171A
Authority
JP
Japan
Prior art keywords
region
oxide film
electrode
diffused
silicon layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15764479A
Other languages
Japanese (ja)
Inventor
Tetsuji Yuasa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP15764479A priority Critical patent/JPS5680171A/en
Publication of JPS5680171A publication Critical patent/JPS5680171A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier

Abstract

PURPOSE:To increase the degree of integration by providing a doped polycrystalline silicon layer between the top gate region and the lead metal-electrode of a J-FET so that a plurality of FETs can be formed in the same insulative separating region. CONSTITUTION:On an N type substrate 16, an oxide film 17 is provided and a P type impurity is diffused and oxidized to provide a source region 18 and a base region 19, and moreover the oxide film on the region where a channel is to be formed is removed and a thin oxide film is provided. Into a portion of the thin oxide film, boron ions are implanted to form a P type region 20, and then phosphorus ions are implanted to form an N type region 21. Then, a polycrystalline silicon layer 23 is formed, into which N type impurity phosphorus is diffused. By etching, all the doped polycrystalline silicon layer into which phosphorus has been diffused is removed except for the contact portion and the exposed surface is oxidized, then, the oxide film on the aluminium-containing metal electrode and the contact portion is removed and replaced by a source electrode 24, a gate electrode 25 and a drain electrode 26.
JP15764479A 1979-12-04 1979-12-04 Semiconductor device Pending JPS5680171A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15764479A JPS5680171A (en) 1979-12-04 1979-12-04 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15764479A JPS5680171A (en) 1979-12-04 1979-12-04 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5680171A true JPS5680171A (en) 1981-07-01

Family

ID=15654221

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15764479A Pending JPS5680171A (en) 1979-12-04 1979-12-04 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5680171A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58158974A (en) * 1982-03-16 1983-09-21 Nec Corp Junction type field effect semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58158974A (en) * 1982-03-16 1983-09-21 Nec Corp Junction type field effect semiconductor device
JPH025301B2 (en) * 1982-03-16 1990-02-01 Nippon Electric Co

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