JPS57204170A - Manufacture of mos type field effect transistor - Google Patents

Manufacture of mos type field effect transistor

Info

Publication number
JPS57204170A
JPS57204170A JP8916681A JP8916681A JPS57204170A JP S57204170 A JPS57204170 A JP S57204170A JP 8916681 A JP8916681 A JP 8916681A JP 8916681 A JP8916681 A JP 8916681A JP S57204170 A JPS57204170 A JP S57204170A
Authority
JP
Japan
Prior art keywords
film
gate electrode
ion
side end
end surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8916681A
Other languages
Japanese (ja)
Inventor
Noriaki Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8916681A priority Critical patent/JPS57204170A/en
Publication of JPS57204170A publication Critical patent/JPS57204170A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)

Abstract

PURPOSE:To microminaturize by a method wherein after formig a gate electrode on a substrate a film with thickness approximate to the depth of ion diffusion is formed on the surface of the substrate including the side end surface of the gate electrode for ion implantation and heat treatment to diffuse a semiconductor region to the side end surface of the gate electrode. CONSTITUTION:A polycrystalline Si film 7 with thickness approximate to the depth of ion diffusion is formed on the gate electrode 3 constituted of high melting point metallic arsenide on the substrate 1 and on the substrate including the side end surface of the gate oxide film 4. Source and drain regions are formed by As<+> ion implantation and annealing treatment via the film 7. When annealing, the thermal diffusion of As<+> ion is restricted to the thickness of the film 7 from the range of ion implantation 8 to remove the superposition of the gate electrode and drain region 6. Thus, characteristic variation due to the fluctuation in operation of the distribution of charges in an insulating film to serve for the microminaturization.
JP8916681A 1981-06-10 1981-06-10 Manufacture of mos type field effect transistor Pending JPS57204170A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8916681A JPS57204170A (en) 1981-06-10 1981-06-10 Manufacture of mos type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8916681A JPS57204170A (en) 1981-06-10 1981-06-10 Manufacture of mos type field effect transistor

Publications (1)

Publication Number Publication Date
JPS57204170A true JPS57204170A (en) 1982-12-14

Family

ID=13963221

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8916681A Pending JPS57204170A (en) 1981-06-10 1981-06-10 Manufacture of mos type field effect transistor

Country Status (1)

Country Link
JP (1) JPS57204170A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4833097A (en) * 1986-05-12 1989-05-23 Butler Alan L Fabrication of MOS-transistors
US5663103A (en) * 1994-06-28 1997-09-02 Nippon Steel Corporation Method of manufacturing an insulated-gate field-effect transistor in a semiconductor device in which source/drain electrodes are defined by formation of silicide on a gate electrode and a field-effect transistor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4833097A (en) * 1986-05-12 1989-05-23 Butler Alan L Fabrication of MOS-transistors
US5663103A (en) * 1994-06-28 1997-09-02 Nippon Steel Corporation Method of manufacturing an insulated-gate field-effect transistor in a semiconductor device in which source/drain electrodes are defined by formation of silicide on a gate electrode and a field-effect transistor

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