JPS5552275A - Junction field effect transistor - Google Patents

Junction field effect transistor

Info

Publication number
JPS5552275A
JPS5552275A JP12558078A JP12558078A JPS5552275A JP S5552275 A JPS5552275 A JP S5552275A JP 12558078 A JP12558078 A JP 12558078A JP 12558078 A JP12558078 A JP 12558078A JP S5552275 A JPS5552275 A JP S5552275A
Authority
JP
Japan
Prior art keywords
source
drain
wafer
channel region
high concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12558078A
Other languages
Japanese (ja)
Other versions
JPS6146990B2 (en
Inventor
Hiroshi Sakuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP12558078A priority Critical patent/JPS5552275A/en
Publication of JPS5552275A publication Critical patent/JPS5552275A/en
Publication of JPS6146990B2 publication Critical patent/JPS6146990B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To increase withstanding voltage easily by forming a low concentration channel region between a source and a drain regions.
CONSTITUTION: An N-type silicon epitaxial layer 21 as a semiconductor layer is formed on a sapphire substrate 20, and then boron and phosphor diffusion processes are executed to form P+ high concentration diffusion regions 23 and 25 for source and drain electrodes and an N+ high concentration diffusion region 24 for a gate electrode. After that, a low concentration channel region layer 22 is formed by implanting boron ions using a photoresist mask via a silicon oxide film formed by heat oxidation. Further, the entire surface of the wafer is covered with a silicon dioxide film to protect the surface and the wafer is annealed in a nitrogen atmosphere to activate the implanted ions. Finally, contact holes are made in the source, gate and drain diffusion regions 23, 24 and 25 respectively and aluminium wiring 27 is applied.
COPYRIGHT: (C)1980,JPO&Japio
JP12558078A 1978-10-11 1978-10-11 Junction field effect transistor Granted JPS5552275A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12558078A JPS5552275A (en) 1978-10-11 1978-10-11 Junction field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12558078A JPS5552275A (en) 1978-10-11 1978-10-11 Junction field effect transistor

Publications (2)

Publication Number Publication Date
JPS5552275A true JPS5552275A (en) 1980-04-16
JPS6146990B2 JPS6146990B2 (en) 1986-10-16

Family

ID=14913692

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12558078A Granted JPS5552275A (en) 1978-10-11 1978-10-11 Junction field effect transistor

Country Status (1)

Country Link
JP (1) JPS5552275A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62254470A (en) * 1986-04-28 1987-11-06 Seiko Instr & Electronics Ltd Manufacture of junction type thin film transistor
JPS6326552A (en) * 1986-05-05 1988-02-04 アイースタット　コーポレーション Particle counter and manufacture thereof
JP2013541199A (en) * 2010-09-13 2013-11-07 アナログ デバイシス， インコーポレイテッド Junction field effect transistor for voltage protection

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0316878Y2 (en) * 1986-07-14 1991-04-10

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62254470A (en) * 1986-04-28 1987-11-06 Seiko Instr & Electronics Ltd Manufacture of junction type thin film transistor
JPS6326552A (en) * 1986-05-05 1988-02-04 アイースタット　コーポレーション Particle counter and manufacture thereof
JP2013541199A (en) * 2010-09-13 2013-11-07 アナログ デバイシス， インコーポレイテッド Junction field effect transistor for voltage protection

Also Published As

Publication number Publication date
JPS6146990B2 (en) 1986-10-16

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