JPS54100268A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS54100268A
JPS54100268A JP621778A JP621778A JPS54100268A JP S54100268 A JPS54100268 A JP S54100268A JP 621778 A JP621778 A JP 621778A JP 621778 A JP621778 A JP 621778A JP S54100268 A JPS54100268 A JP S54100268A
Authority
JP
Japan
Prior art keywords
region
layer
type
shallow
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP621778A
Other languages
Japanese (ja)
Inventor
Tadao Kachi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP621778A priority Critical patent/JPS54100268A/en
Publication of JPS54100268A publication Critical patent/JPS54100268A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To reduce the distance of the depletion layer necessary for the pinch-off state and thus to lower the active voltage of the electrostatic induction transistor by inserting the low-impurity region of the 1st conducting type as well as the insulating film between the 1st conducting gate region and the 2nd conducting source region.
CONSTITUTION: N+-type burined layer 8 is formed through diffusion of P--type Si substrate 11, and then N--layer 7 is epitaxial-grown on the entire surface. And the entire surface is covered with Si3N4 film 12 (oxidation-proof film) with ring- shaped opening drilled. The p-type impurity is diffused at the opening to form two shallow P-type regions 13 on the surface of layer 7. Through the heat treatment in the oxidizing atmosphere, region 13 is pushed down to the middle of layer 7 to from P--region 9 with its surface covered with SiO2 film 10. After this, shallow P+-region 5 adjacent to the outer edge of region 9 is formed through diffusion of the surface of layer 7, and furthermore shallow N+-region 6 is formed through diffusion on the surface of layer 7 which is held between two regions 9. Then the gate, source and drain electrodes are attached to region 5, 6 and layer 8 respectively.
COPYRIGHT: (C)1979,JPO&Japio
JP621778A 1978-01-25 1978-01-25 Semiconductor device Pending JPS54100268A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP621778A JPS54100268A (en) 1978-01-25 1978-01-25 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP621778A JPS54100268A (en) 1978-01-25 1978-01-25 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS54100268A true JPS54100268A (en) 1979-08-07

Family

ID=11632345

Family Applications (1)

Application Number Title Priority Date Filing Date
JP621778A Pending JPS54100268A (en) 1978-01-25 1978-01-25 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS54100268A (en)

Similar Documents

Publication Publication Date Title
JPS55148464A (en) Mos semiconductor device and its manufacture
JPS5623771A (en) Semiconductor memory
JPS5688354A (en) Semiconductor integrated circuit device
JPS55151363A (en) Mos semiconductor device and fabricating method of the same
JPS5587483A (en) Mis type semiconductor device
JPS56110264A (en) High withstand voltage mos transistor
JPS57155777A (en) Mos transistor
JPS54136275A (en) Field effect transistor of isolation gate
JPS5587481A (en) Mis type semiconductor device
JPS54100268A (en) Semiconductor device
JPS5727069A (en) Mos type simiconductor device
JPS5331979A (en) Insulated gate type field effect semiconductor device
JPS5556663A (en) Insulating-gate type field-effect transistor
JPS5552275A (en) Junction field effect transistor
JPS5588378A (en) Semiconductor device
JPS55107229A (en) Method of manufacturing semiconductor device
JPS5522887A (en) Mis type field effect semiconductor device
JPS54100269A (en) Semiconductor device
JPS5552262A (en) Mos semiconductor device
JPS57192080A (en) Semiconductor device
JPS5574182A (en) Preparing junction type field effect transistor
JPS5586163A (en) Mis semiconductor device
JPS5673468A (en) Mos type semiconductor device
JPS57173965A (en) Semiconductor device
JPS55127052A (en) Field effect semiconductor device