JPS54100268A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS54100268A JPS54100268A JP621778A JP621778A JPS54100268A JP S54100268 A JPS54100268 A JP S54100268A JP 621778 A JP621778 A JP 621778A JP 621778 A JP621778 A JP 621778A JP S54100268 A JPS54100268 A JP S54100268A
- Authority
- JP
- Japan
- Prior art keywords
- region
- layer
- type
- shallow
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To reduce the distance of the depletion layer necessary for the pinch-off state and thus to lower the active voltage of the electrostatic induction transistor by inserting the low-impurity region of the 1st conducting type as well as the insulating film between the 1st conducting gate region and the 2nd conducting source region.
CONSTITUTION: N+-type burined layer 8 is formed through diffusion of P--type Si substrate 11, and then N--layer 7 is epitaxial-grown on the entire surface. And the entire surface is covered with Si3N4 film 12 (oxidation-proof film) with ring- shaped opening drilled. The p-type impurity is diffused at the opening to form two shallow P-type regions 13 on the surface of layer 7. Through the heat treatment in the oxidizing atmosphere, region 13 is pushed down to the middle of layer 7 to from P--region 9 with its surface covered with SiO2 film 10. After this, shallow P+-region 5 adjacent to the outer edge of region 9 is formed through diffusion of the surface of layer 7, and furthermore shallow N+-region 6 is formed through diffusion on the surface of layer 7 which is held between two regions 9. Then the gate, source and drain electrodes are attached to region 5, 6 and layer 8 respectively.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP621778A JPS54100268A (en) | 1978-01-25 | 1978-01-25 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP621778A JPS54100268A (en) | 1978-01-25 | 1978-01-25 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54100268A true JPS54100268A (en) | 1979-08-07 |
Family
ID=11632345
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP621778A Pending JPS54100268A (en) | 1978-01-25 | 1978-01-25 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54100268A (en) |
-
1978
- 1978-01-25 JP JP621778A patent/JPS54100268A/en active Pending
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