JPS5688354A - Semiconductor integrated circuit device - Google Patents
Semiconductor integrated circuit deviceInfo
- Publication number
- JPS5688354A JPS5688354A JP16480479A JP16480479A JPS5688354A JP S5688354 A JPS5688354 A JP S5688354A JP 16480479 A JP16480479 A JP 16480479A JP 16480479 A JP16480479 A JP 16480479A JP S5688354 A JPS5688354 A JP S5688354A
- Authority
- JP
- Japan
- Prior art keywords
- film
- gate electrode
- mask
- sio2
- polycrystalline
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 8
- 229910052681 coesite Inorganic materials 0.000 abstract 4
- 229910052906 cristobalite Inorganic materials 0.000 abstract 4
- 239000000377 silicon dioxide Substances 0.000 abstract 4
- 235000012239 silicon dioxide Nutrition 0.000 abstract 4
- 229910052682 stishovite Inorganic materials 0.000 abstract 4
- 229910052905 tridymite Inorganic materials 0.000 abstract 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 3
- 150000002500 ions Chemical class 0.000 abstract 2
- 239000010410 layer Substances 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 230000000717 retained effect Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 239000002344 surface layer Substances 0.000 abstract 1
Classifications
-
- H01L29/78648—
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To obtain a transistor capable of being controlled at threshold voltage by forming a negative gate electrode formed on the channel region of an MOS transistor of two layers and applying different voltages thereto. CONSTITUTION:An SiO2 film 2 and a polycrystalline silicon film 3 are laminated on an Si substrate 1, an oxidation resistant mask 4 is formed only on a gate electrode forming region, is heat treated, the film 3 is retained as a film 31 only under the mask 4, and the other is transformed into an SiO2 film 32. Subsequently, the mask 4 is removed, is oxidized, first thin gate SiO2 film 5 is formed on the surface layer of the film 31, ions are implanted therethrough, and the film 31 is used as an n<+> type first gate electrode. Thereafter, a polycrystalline Si film 6 is again accumulated on the element forming region including it, is covered with an SiO2 film 7, second polycrystalline Si gate electrode 81 is formed on the center, ions are implanted, n<+> type source and drain regions 9 and 10 are formed on the peripheries of the film 6, and a conductivity is imparted to the electrode 81.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16480479A JPS5688354A (en) | 1979-12-20 | 1979-12-20 | Semiconductor integrated circuit device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16480479A JPS5688354A (en) | 1979-12-20 | 1979-12-20 | Semiconductor integrated circuit device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5688354A true JPS5688354A (en) | 1981-07-17 |
Family
ID=15800230
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16480479A Pending JPS5688354A (en) | 1979-12-20 | 1979-12-20 | Semiconductor integrated circuit device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5688354A (en) |
Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5817674A (en) * | 1981-07-24 | 1983-02-01 | Seiko Epson Corp | Metal oxide semiconductor type semiconductor device |
JPS5897877A (en) * | 1981-11-26 | 1983-06-10 | シ−メンス・アクチエンゲゼルシヤフト | Thin film mos phototransistor, method of producing same and driving method |
JPS59182570A (en) * | 1983-03-31 | 1984-10-17 | Fujitsu Ltd | Semiconductor device |
JPS6068654A (en) * | 1983-08-25 | 1985-04-19 | Tadahiro Omi | Semiconductor integrated circuit |
JPS6215852A (en) * | 1985-07-15 | 1987-01-24 | Nec Corp | Semiconductor device |
JPS6329975A (en) * | 1986-07-23 | 1988-02-08 | Sony Corp | Field effect semiconductor device |
JPS63119578A (en) * | 1986-11-07 | 1988-05-24 | Seiko Epson Corp | Semiconductor device |
US4748485A (en) * | 1985-03-21 | 1988-05-31 | Hughes Aircraft Company | Opposed dual-gate hybrid structure for three-dimensional integrated circuits |
US4876582A (en) * | 1983-05-02 | 1989-10-24 | Ncr Corporation | Crystallized silicon-on-insulator nonvolatile memory device |
US4958205A (en) * | 1985-03-29 | 1990-09-18 | Matsushita Electric Industrial Co., Ltd. | Thin film transistor array and method of manufacturing the same |
US4980308A (en) * | 1987-01-30 | 1990-12-25 | Sony Corporation | Method of making a thin film transistor |
US5138409A (en) * | 1989-02-09 | 1992-08-11 | Fujitsu Limited | High voltage semiconductor device having silicon-on-insulator structure with reduced on-resistance |
US5148393A (en) * | 1988-07-07 | 1992-09-15 | Kabushiki Kaisha Toshiba | Mos dynamic semiconductor memory cell |
US5166086A (en) * | 1985-03-29 | 1992-11-24 | Matsushita Electric Industrial Co., Ltd. | Thin film transistor array and method of manufacturing same |
US5550390A (en) * | 1991-08-08 | 1996-08-27 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and manufacturing method thereof |
US5726082A (en) * | 1995-06-30 | 1998-03-10 | Hyundai Electronics Industries Co., Ltd. | Semiconductor device and method for fabricating the same |
US5859444A (en) * | 1991-08-08 | 1999-01-12 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5235585A (en) * | 1975-08-29 | 1977-03-18 | Westinghouse Electric Corp | Thin film transistor |
-
1979
- 1979-12-20 JP JP16480479A patent/JPS5688354A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5235585A (en) * | 1975-08-29 | 1977-03-18 | Westinghouse Electric Corp | Thin film transistor |
Cited By (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5817674A (en) * | 1981-07-24 | 1983-02-01 | Seiko Epson Corp | Metal oxide semiconductor type semiconductor device |
JPS5897877A (en) * | 1981-11-26 | 1983-06-10 | シ−メンス・アクチエンゲゼルシヤフト | Thin film mos phototransistor, method of producing same and driving method |
JPS59182570A (en) * | 1983-03-31 | 1984-10-17 | Fujitsu Ltd | Semiconductor device |
US4876582A (en) * | 1983-05-02 | 1989-10-24 | Ncr Corporation | Crystallized silicon-on-insulator nonvolatile memory device |
JPS6068654A (en) * | 1983-08-25 | 1985-04-19 | Tadahiro Omi | Semiconductor integrated circuit |
US4748485A (en) * | 1985-03-21 | 1988-05-31 | Hughes Aircraft Company | Opposed dual-gate hybrid structure for three-dimensional integrated circuits |
US4958205A (en) * | 1985-03-29 | 1990-09-18 | Matsushita Electric Industrial Co., Ltd. | Thin film transistor array and method of manufacturing the same |
US5166086A (en) * | 1985-03-29 | 1992-11-24 | Matsushita Electric Industrial Co., Ltd. | Thin film transistor array and method of manufacturing same |
US5137841A (en) * | 1985-03-29 | 1992-08-11 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing a thin film transistor using positive and negative photoresists |
JPS6215852A (en) * | 1985-07-15 | 1987-01-24 | Nec Corp | Semiconductor device |
JPS6329975A (en) * | 1986-07-23 | 1988-02-08 | Sony Corp | Field effect semiconductor device |
JPH0824186B2 (en) * | 1986-07-23 | 1996-03-06 | ソニー株式会社 | Field effect type semiconductor device |
JPS63119578A (en) * | 1986-11-07 | 1988-05-24 | Seiko Epson Corp | Semiconductor device |
US4980308A (en) * | 1987-01-30 | 1990-12-25 | Sony Corporation | Method of making a thin film transistor |
US5148393A (en) * | 1988-07-07 | 1992-09-15 | Kabushiki Kaisha Toshiba | Mos dynamic semiconductor memory cell |
US5138409A (en) * | 1989-02-09 | 1992-08-11 | Fujitsu Limited | High voltage semiconductor device having silicon-on-insulator structure with reduced on-resistance |
US5550390A (en) * | 1991-08-08 | 1996-08-27 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and manufacturing method thereof |
US5859444A (en) * | 1991-08-08 | 1999-01-12 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device |
US5726082A (en) * | 1995-06-30 | 1998-03-10 | Hyundai Electronics Industries Co., Ltd. | Semiconductor device and method for fabricating the same |
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