JPS57192080A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS57192080A JPS57192080A JP56077439A JP7743981A JPS57192080A JP S57192080 A JPS57192080 A JP S57192080A JP 56077439 A JP56077439 A JP 56077439A JP 7743981 A JP7743981 A JP 7743981A JP S57192080 A JPS57192080 A JP S57192080A
- Authority
- JP
- Japan
- Prior art keywords
- drain
- source
- silicon substrate
- wiring
- arsenic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 abstract 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052710 silicon Inorganic materials 0.000 abstract 4
- 239000010703 silicon Substances 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052785 arsenic Inorganic materials 0.000 abstract 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 238000002161 passivation Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Abstract
PURPOSE:To form a semiconductor device in solid structure at an MISFET by a method wherein the source and drain regions, electrodes for source and drain, and a gate electrode being covered the circumference thereof with an insulating film are buried from the surface of a semiconductor substrate toward the inside. CONSTITUTION:Openings are formed in a silicon substrate 1, and N type polycrystalline silicon doped with arsenic is filled up therein by the CVD method. Then the silicon substrate 1 is heated in the oxidizing atmosphere, arsenic in polycrystalline silicon is made to be diffused in the silicon substrate at the circumference to form the N type regions, and the N type regions for source and drain, and electrodes 4, 4' for source and drain are formed. A gate electrode 6 is formed similarly. An SiO2 film 8, a passivation film 9 are coated on the surface of the silicon substrate 1, and a source wiring 10, a drain wiring 11, and a gate wiring 12 are formed with Al, etc.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56077439A JPS57192080A (en) | 1981-05-21 | 1981-05-21 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56077439A JPS57192080A (en) | 1981-05-21 | 1981-05-21 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57192080A true JPS57192080A (en) | 1982-11-26 |
Family
ID=13634048
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56077439A Pending JPS57192080A (en) | 1981-05-21 | 1981-05-21 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57192080A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02105576A (en) * | 1988-10-14 | 1990-04-18 | Nec Corp | Field effect transistor |
| JPH0438877A (en) * | 1990-06-04 | 1992-02-10 | Canon Inc | Semiconductor device and manufacture method thereof |
| WO2001005003A1 (en) * | 1999-07-12 | 2001-01-18 | Oyokoden Lab Co., Ltd. | Laser device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51147269A (en) * | 1975-06-13 | 1976-12-17 | Hitachi Ltd | Field effect transistor |
-
1981
- 1981-05-21 JP JP56077439A patent/JPS57192080A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51147269A (en) * | 1975-06-13 | 1976-12-17 | Hitachi Ltd | Field effect transistor |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02105576A (en) * | 1988-10-14 | 1990-04-18 | Nec Corp | Field effect transistor |
| JPH0438877A (en) * | 1990-06-04 | 1992-02-10 | Canon Inc | Semiconductor device and manufacture method thereof |
| WO2001005003A1 (en) * | 1999-07-12 | 2001-01-18 | Oyokoden Lab Co., Ltd. | Laser device |
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