JPS5664460A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5664460A
JPS5664460A JP14072679A JP14072679A JPS5664460A JP S5664460 A JPS5664460 A JP S5664460A JP 14072679 A JP14072679 A JP 14072679A JP 14072679 A JP14072679 A JP 14072679A JP S5664460 A JPS5664460 A JP S5664460A
Authority
JP
Japan
Prior art keywords
film
regions
substrate
electrode
sio2
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14072679A
Other languages
Japanese (ja)
Inventor
Kazushi Nagata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP14072679A priority Critical patent/JPS5664460A/en
Publication of JPS5664460A publication Critical patent/JPS5664460A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
    • H01L27/0738—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors in combination with resistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To reduce the occupying area of a resistor in a semiconductor device by utilizing the isolating conductivity of a nitride film or an oxide film as a load resistance when integrating an FET or a bipolar transistor and a load resistor. CONSTITUTION:A thick field SiO2 film 2 is formed on the periphery of an Si substrate 1, reverse conductivity type diffused regions 3, 4 are formed in the substrate 1 surrounded by the film 2, and a thin gate SiO2 film 5 and a polycrystalline silicon gate electrode 6 are sequentially coated on the surface of the exposed substrate 1 between the regions 3 and 4 as an FET. Subsequently, the whole surface is covered by a thick insulating film 9, a window is opened thereat. When aluminum wire 10 is mounted to the regions 3, 4 and the electrode 6, a thin film 11 made of Si3N4 or SiO2 or the like is formed at the outside of the aluminum wire 10 formed on the region 2 or the like as a load resistance simultaneously integrated, and is used as the load resistance. Since the resistance is thus provided at the contact part of the electrode, there can be provided an inverter having small occupying area.
JP14072679A 1979-10-30 1979-10-30 Semiconductor device Pending JPS5664460A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14072679A JPS5664460A (en) 1979-10-30 1979-10-30 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14072679A JPS5664460A (en) 1979-10-30 1979-10-30 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5664460A true JPS5664460A (en) 1981-06-01

Family

ID=15275273

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14072679A Pending JPS5664460A (en) 1979-10-30 1979-10-30 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5664460A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5745967A (en) * 1980-09-04 1982-03-16 Toshiba Corp Semiconductor device
JPH01140666A (en) * 1987-11-26 1989-06-01 Nec Corp Semiconductor device
US4905070A (en) * 1988-09-02 1990-02-27 Motorola, Inc. Semiconductor device exhibiting no degradation of low current gain
JP2010228884A (en) * 2009-03-27 2010-10-14 Kobelco Cranes Co Ltd Working vehicle

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5745967A (en) * 1980-09-04 1982-03-16 Toshiba Corp Semiconductor device
JPH01140666A (en) * 1987-11-26 1989-06-01 Nec Corp Semiconductor device
US4905070A (en) * 1988-09-02 1990-02-27 Motorola, Inc. Semiconductor device exhibiting no degradation of low current gain
JP2010228884A (en) * 2009-03-27 2010-10-14 Kobelco Cranes Co Ltd Working vehicle

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