JPS57210660A - Static ram - Google Patents
Static ramInfo
- Publication number
- JPS57210660A JPS57210660A JP56095087A JP9508781A JPS57210660A JP S57210660 A JPS57210660 A JP S57210660A JP 56095087 A JP56095087 A JP 56095087A JP 9508781 A JP9508781 A JP 9508781A JP S57210660 A JPS57210660 A JP S57210660A
- Authority
- JP
- Japan
- Prior art keywords
- film
- resistance
- static ram
- psg
- polycrystalline
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003068 static effect Effects 0.000 title abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Formation Of Insulating Films (AREA)
- Semiconductor Memories (AREA)
Abstract
PURPOSE:To improve the reliability of a static RAM by allowing an insulating film to remain on a high resistance formed of polycrystalline Si of the RAM, thereby preventing the diffusion of P from a PSG film. CONSTITUTION:A gate oxidized film 23 and a field oxidized film 22 are formed on the surface of an Si substrate 21, polycrystalline Si is formed on the surface, and a thermally oxidized film is then formed on the surface. After a silicon nitride film 26 is then formed on the overall surface, a CVD SiO2 film 27 is patterned and formed on the position of the resistance as a mask, P ions are implanted, and a gate electrode 24, source and drain 28 and lead part of the resistance are formed. After a PSG film 31 is formed in the state that the insulating film on the resistance remains, an aluminum wire 32 is formed. In this manner, since the diffusion of the P from the PSG film can be prevented, the heat treating condition can be alleviated, thereby enhancing the reliability of the static RAM.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56095087A JPS57210660A (en) | 1981-06-19 | 1981-06-19 | Static ram |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56095087A JPS57210660A (en) | 1981-06-19 | 1981-06-19 | Static ram |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62280512A Division JPS63158863A (en) | 1987-11-06 | 1987-11-06 | Static ram |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57210660A true JPS57210660A (en) | 1982-12-24 |
Family
ID=14128144
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56095087A Pending JPS57210660A (en) | 1981-06-19 | 1981-06-19 | Static ram |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57210660A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60219760A (en) * | 1984-04-17 | 1985-11-02 | Toshiba Corp | Formation of semiconductor resistant layer |
| JPS61214555A (en) * | 1985-03-20 | 1986-09-24 | Hitachi Ltd | Semiconductor device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5372483A (en) * | 1976-12-09 | 1978-06-27 | Matsushita Electric Ind Co Ltd | Semiconductor device and its manufacture |
| JPS54105485A (en) * | 1978-02-06 | 1979-08-18 | Mitsubishi Electric Corp | Manufacture of semiconductor unit |
-
1981
- 1981-06-19 JP JP56095087A patent/JPS57210660A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5372483A (en) * | 1976-12-09 | 1978-06-27 | Matsushita Electric Ind Co Ltd | Semiconductor device and its manufacture |
| JPS54105485A (en) * | 1978-02-06 | 1979-08-18 | Mitsubishi Electric Corp | Manufacture of semiconductor unit |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60219760A (en) * | 1984-04-17 | 1985-11-02 | Toshiba Corp | Formation of semiconductor resistant layer |
| JPS61214555A (en) * | 1985-03-20 | 1986-09-24 | Hitachi Ltd | Semiconductor device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS55160457A (en) | Semiconductor device | |
| JPS5748246A (en) | Manufacture of semiconductor device | |
| JPS54140483A (en) | Semiconductor device | |
| JPS57210660A (en) | Static ram | |
| JPS54137982A (en) | Semiconductor device and its manufacture | |
| GB1358715A (en) | Manufacture of semiconductor devices | |
| JPS54141585A (en) | Semiconductor integrated circuit device | |
| JPS55157241A (en) | Manufacture of semiconductor device | |
| JPS55125651A (en) | Production of semiconductor integrated circuit | |
| GB1353185A (en) | Method of making a semiconductor device | |
| JPS5766671A (en) | Semiconductor device | |
| JPS5664460A (en) | Semiconductor device | |
| JPS57192080A (en) | Semiconductor device | |
| JPS5552262A (en) | Mos semiconductor device | |
| JPS5635471A (en) | Manufacture of semiconductor device | |
| JPS5623753A (en) | Mos filed effect integrated circuit | |
| JPS567482A (en) | Manufacturing of semiconductor device | |
| JPS56111257A (en) | Preparation of insulated gate type semiconductor ic device | |
| JPS52147983A (en) | Insulation gate type semiconductor device | |
| JPS56112744A (en) | Manufacture of semiconductor device | |
| JPS5323574A (en) | Forming method of silicon oxide film | |
| JPS5346287A (en) | Production of semiconductor integrated circuit | |
| JPS56162871A (en) | Manufacture of semiconductor device | |
| JPS561572A (en) | Manufacture of semiconductor device | |
| JPS57102052A (en) | Manufacture of semiconductor device |