JPS54105485A - Manufacture of semiconductor unit - Google Patents

Manufacture of semiconductor unit

Info

Publication number
JPS54105485A
JPS54105485A JP1284178A JP1284178A JPS54105485A JP S54105485 A JPS54105485 A JP S54105485A JP 1284178 A JP1284178 A JP 1284178A JP 1284178 A JP1284178 A JP 1284178A JP S54105485 A JPS54105485 A JP S54105485A
Authority
JP
Japan
Prior art keywords
membrane
sio
impurity
constitution
unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1284178A
Other languages
Japanese (ja)
Inventor
Yuichi Ishikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP1284178A priority Critical patent/JPS54105485A/en
Publication of JPS54105485A publication Critical patent/JPS54105485A/en
Pending legal-status Critical Current

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  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: To provide a highly resistive unit with excellent repeatability by selectively making polycrystalline Si on insulating membrane on semiconductor substrate electrically conductive.
CONSTITUTION: Poly Si 3 is formed on SiO22 on Si substrate 1 and the required value of resistance is obtained by adding the impurity on overall surface. Then, membrane 3 is photo-etched and SiO24.Si3N45 are laminated. Membranes 4 and 5 are photoetched again, the required pattern is provided, the required quantity of impurity is doped on the unmasked portions 3a and 3b on membrane 5 and, then, the terminal of resisting unit is picked up from layers 3a and 3b. The allowable thickness of Si3N4 is approximately 500Å. With this constitution, a resisting unit with specially high resistance is obtained with excellent repeatability.
COPYRIGHT: (C)1979,JPO&Japio
JP1284178A 1978-02-06 1978-02-06 Manufacture of semiconductor unit Pending JPS54105485A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1284178A JPS54105485A (en) 1978-02-06 1978-02-06 Manufacture of semiconductor unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1284178A JPS54105485A (en) 1978-02-06 1978-02-06 Manufacture of semiconductor unit

Publications (1)

Publication Number Publication Date
JPS54105485A true JPS54105485A (en) 1979-08-18

Family

ID=11816601

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1284178A Pending JPS54105485A (en) 1978-02-06 1978-02-06 Manufacture of semiconductor unit

Country Status (1)

Country Link
JP (1) JPS54105485A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57128054A (en) * 1981-12-21 1982-08-09 Hitachi Ltd Semiconductor device
JPS57210660A (en) * 1981-06-19 1982-12-24 Seiko Epson Corp Static ram
JPS63158863A (en) * 1987-11-06 1988-07-01 Seiko Epson Corp Static ram

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57210660A (en) * 1981-06-19 1982-12-24 Seiko Epson Corp Static ram
JPS57128054A (en) * 1981-12-21 1982-08-09 Hitachi Ltd Semiconductor device
JPS63158863A (en) * 1987-11-06 1988-07-01 Seiko Epson Corp Static ram
JPH0516186B2 (en) * 1987-11-06 1993-03-03 Seiko Epson Corp

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