JPS56110267A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56110267A
JPS56110267A JP1335280A JP1335280A JPS56110267A JP S56110267 A JPS56110267 A JP S56110267A JP 1335280 A JP1335280 A JP 1335280A JP 1335280 A JP1335280 A JP 1335280A JP S56110267 A JPS56110267 A JP S56110267A
Authority
JP
Japan
Prior art keywords
polycrystalline silicon
straight line
bent part
line part
resistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1335280A
Other languages
Japanese (ja)
Inventor
Masahide Ozawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP1335280A priority Critical patent/JPS56110267A/en
Publication of JPS56110267A publication Critical patent/JPS56110267A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/20—Resistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)
  • Protection Of Static Devices (AREA)

Abstract

PURPOSE:To improve withstand electrostatic property without a change in circuit layout by thickening the coat of polycrystalline silicon resistor at the curveture or the bent part. CONSTITUTION:A polycrystalline silicon resistance bent part 11 across the straight line part 3 of polycrystalline silicon resistor has a coat gradually becoming thicker from the straight line part. This structure allows more than two laminated layers of polycrystalline silicon to be continuously formed on the bent part of polycrystalline silicon resistor in the process of manufacturing MOSIC using more than two laminated layers of polycrystalline silicon. This formation can easily be realized. The number 12 indicates a semiconductor for substrate, 13 a field insulation film, 15 a polycrystalline silicon thermaloxidized film, 3 a multicrystal silicon resistance straight line part and 14 an insulation film cover.
JP1335280A 1980-02-06 1980-02-06 Semiconductor device Pending JPS56110267A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1335280A JPS56110267A (en) 1980-02-06 1980-02-06 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1335280A JPS56110267A (en) 1980-02-06 1980-02-06 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS56110267A true JPS56110267A (en) 1981-09-01

Family

ID=11830702

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1335280A Pending JPS56110267A (en) 1980-02-06 1980-02-06 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56110267A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6324712A (en) * 1986-07-17 1988-02-02 Toshiba Corp Mos-type semiconductor circuit
JPH0590521A (en) * 1992-03-16 1993-04-09 Seiko Epson Corp Semiconductor device
JPH0590523A (en) * 1992-03-16 1993-04-09 Seiko Epson Corp Semiconductor device
JPH0590522A (en) * 1992-03-16 1993-04-09 Seiko Epson Corp Semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6324712A (en) * 1986-07-17 1988-02-02 Toshiba Corp Mos-type semiconductor circuit
JPH0590521A (en) * 1992-03-16 1993-04-09 Seiko Epson Corp Semiconductor device
JPH0590523A (en) * 1992-03-16 1993-04-09 Seiko Epson Corp Semiconductor device
JPH0590522A (en) * 1992-03-16 1993-04-09 Seiko Epson Corp Semiconductor device

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