JPS5650533A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5650533A JPS5650533A JP12541379A JP12541379A JPS5650533A JP S5650533 A JPS5650533 A JP S5650533A JP 12541379 A JP12541379 A JP 12541379A JP 12541379 A JP12541379 A JP 12541379A JP S5650533 A JPS5650533 A JP S5650533A
- Authority
- JP
- Japan
- Prior art keywords
- film
- poly
- type
- gate
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To make it possible to form the low resistance electrodes and wiring layers such as MIS-IC and the like, by providing heat resistant metal films such as Mo, W, Ti, Cr, and the like on the surface of a silicon semiconductor region via a polycrystalline silicon film. CONSTITUTION:On the surface of a P type Si substrate 21, are selectively provided a gate SiO2 film 22, a poly Si film 23 containing N type impurities, an Mo film 24, and a poly Si film 25, sequentially. An N type source 26 and an N type drain 27 are provided on the exposed portion of the substrate, and the gate portion is protected by a phosphorus glass 29. Since the high melting point metal film 24 is provided between the poly Si films 23 and 25, the resistance of the gate electrode wire can be greatly reduced. Since the first layer is a poly Si film, the gate electrode wire can be directly connected to the source and the drain.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12541379A JPS5650533A (en) | 1979-10-01 | 1979-10-01 | Semiconductor device |
DE19792943150 DE2943150A1 (en) | 1978-10-25 | 1979-10-25 | MIS device prodn. with protective film formation on exposed metal - before doping by heat treatment of prevent oxidn. and evapn. of metal, pref. molybdenum |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12541379A JPS5650533A (en) | 1979-10-01 | 1979-10-01 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5650533A true JPS5650533A (en) | 1981-05-07 |
Family
ID=14909485
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12541379A Pending JPS5650533A (en) | 1978-10-25 | 1979-10-01 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5650533A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57194567A (en) * | 1981-05-27 | 1982-11-30 | Hitachi Ltd | Semiconductor memory device |
JPS6486551A (en) * | 1988-05-27 | 1989-03-31 | Hitachi Ltd | Semiconductor storage device |
JPH0198256A (en) * | 1988-05-27 | 1989-04-17 | Hitachi Ltd | Semiconductor memory |
JPH0198255A (en) * | 1988-05-27 | 1989-04-17 | Hitachi Ltd | Semiconductor memory |
JPH01265541A (en) * | 1988-04-15 | 1989-10-23 | Fujitsu Ltd | Semiconductor device |
JPH02205343A (en) * | 1988-01-29 | 1990-08-15 | Philips Gloeilampenfab:Nv | Manufacture of semiconductor device |
US5003375A (en) * | 1988-01-21 | 1991-03-26 | Seiko Epson Corporation | MIS type semiconductor integrated circuit device having a refractory metal gate electrode and refractory metal silicide film covering the gate electrode |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51147273A (en) * | 1975-06-13 | 1976-12-17 | Fujitsu Ltd | Manufacturing process of semiconductor device |
JPS5451785A (en) * | 1977-10-03 | 1979-04-23 | Oki Electric Ind Co Ltd | Manufacture of mos-type semiconductor |
-
1979
- 1979-10-01 JP JP12541379A patent/JPS5650533A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51147273A (en) * | 1975-06-13 | 1976-12-17 | Fujitsu Ltd | Manufacturing process of semiconductor device |
JPS5451785A (en) * | 1977-10-03 | 1979-04-23 | Oki Electric Ind Co Ltd | Manufacture of mos-type semiconductor |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57194567A (en) * | 1981-05-27 | 1982-11-30 | Hitachi Ltd | Semiconductor memory device |
US5003375A (en) * | 1988-01-21 | 1991-03-26 | Seiko Epson Corporation | MIS type semiconductor integrated circuit device having a refractory metal gate electrode and refractory metal silicide film covering the gate electrode |
JPH02205343A (en) * | 1988-01-29 | 1990-08-15 | Philips Gloeilampenfab:Nv | Manufacture of semiconductor device |
JPH01265541A (en) * | 1988-04-15 | 1989-10-23 | Fujitsu Ltd | Semiconductor device |
JPS6486551A (en) * | 1988-05-27 | 1989-03-31 | Hitachi Ltd | Semiconductor storage device |
JPH0198256A (en) * | 1988-05-27 | 1989-04-17 | Hitachi Ltd | Semiconductor memory |
JPH0198255A (en) * | 1988-05-27 | 1989-04-17 | Hitachi Ltd | Semiconductor memory |
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