JPS5650533A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5650533A
JPS5650533A JP12541379A JP12541379A JPS5650533A JP S5650533 A JPS5650533 A JP S5650533A JP 12541379 A JP12541379 A JP 12541379A JP 12541379 A JP12541379 A JP 12541379A JP S5650533 A JPS5650533 A JP S5650533A
Authority
JP
Japan
Prior art keywords
film
poly
type
gate
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12541379A
Other languages
Japanese (ja)
Inventor
Tatsumi Shirasu
Yukio Tanigaki
Yasunobu Osa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP12541379A priority Critical patent/JPS5650533A/en
Priority to DE19792943150 priority patent/DE2943150A1/en
Publication of JPS5650533A publication Critical patent/JPS5650533A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To make it possible to form the low resistance electrodes and wiring layers such as MIS-IC and the like, by providing heat resistant metal films such as Mo, W, Ti, Cr, and the like on the surface of a silicon semiconductor region via a polycrystalline silicon film. CONSTITUTION:On the surface of a P type Si substrate 21, are selectively provided a gate SiO2 film 22, a poly Si film 23 containing N type impurities, an Mo film 24, and a poly Si film 25, sequentially. An N type source 26 and an N type drain 27 are provided on the exposed portion of the substrate, and the gate portion is protected by a phosphorus glass 29. Since the high melting point metal film 24 is provided between the poly Si films 23 and 25, the resistance of the gate electrode wire can be greatly reduced. Since the first layer is a poly Si film, the gate electrode wire can be directly connected to the source and the drain.
JP12541379A 1978-10-25 1979-10-01 Semiconductor device Pending JPS5650533A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP12541379A JPS5650533A (en) 1979-10-01 1979-10-01 Semiconductor device
DE19792943150 DE2943150A1 (en) 1978-10-25 1979-10-25 MIS device prodn. with protective film formation on exposed metal - before doping by heat treatment of prevent oxidn. and evapn. of metal, pref. molybdenum

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12541379A JPS5650533A (en) 1979-10-01 1979-10-01 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5650533A true JPS5650533A (en) 1981-05-07

Family

ID=14909485

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12541379A Pending JPS5650533A (en) 1978-10-25 1979-10-01 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5650533A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57194567A (en) * 1981-05-27 1982-11-30 Hitachi Ltd Semiconductor memory device
JPS6486551A (en) * 1988-05-27 1989-03-31 Hitachi Ltd Semiconductor storage device
JPH0198256A (en) * 1988-05-27 1989-04-17 Hitachi Ltd Semiconductor memory
JPH0198255A (en) * 1988-05-27 1989-04-17 Hitachi Ltd Semiconductor memory
JPH01265541A (en) * 1988-04-15 1989-10-23 Fujitsu Ltd Semiconductor device
JPH02205343A (en) * 1988-01-29 1990-08-15 Philips Gloeilampenfab:Nv Manufacture of semiconductor device
US5003375A (en) * 1988-01-21 1991-03-26 Seiko Epson Corporation MIS type semiconductor integrated circuit device having a refractory metal gate electrode and refractory metal silicide film covering the gate electrode

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51147273A (en) * 1975-06-13 1976-12-17 Fujitsu Ltd Manufacturing process of semiconductor device
JPS5451785A (en) * 1977-10-03 1979-04-23 Oki Electric Ind Co Ltd Manufacture of mos-type semiconductor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51147273A (en) * 1975-06-13 1976-12-17 Fujitsu Ltd Manufacturing process of semiconductor device
JPS5451785A (en) * 1977-10-03 1979-04-23 Oki Electric Ind Co Ltd Manufacture of mos-type semiconductor

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57194567A (en) * 1981-05-27 1982-11-30 Hitachi Ltd Semiconductor memory device
US5003375A (en) * 1988-01-21 1991-03-26 Seiko Epson Corporation MIS type semiconductor integrated circuit device having a refractory metal gate electrode and refractory metal silicide film covering the gate electrode
JPH02205343A (en) * 1988-01-29 1990-08-15 Philips Gloeilampenfab:Nv Manufacture of semiconductor device
JPH01265541A (en) * 1988-04-15 1989-10-23 Fujitsu Ltd Semiconductor device
JPS6486551A (en) * 1988-05-27 1989-03-31 Hitachi Ltd Semiconductor storage device
JPH0198256A (en) * 1988-05-27 1989-04-17 Hitachi Ltd Semiconductor memory
JPH0198255A (en) * 1988-05-27 1989-04-17 Hitachi Ltd Semiconductor memory

Similar Documents

Publication Publication Date Title
JPS5748246A (en) Manufacture of semiconductor device
JPS5780739A (en) Semiconductor integrated circuit device and manufacture thereof
JPS5530846A (en) Method for manufacturing fixed memory
JPS5650533A (en) Semiconductor device
JPS5740967A (en) Integrated circuit device
JPS55157241A (en) Manufacture of semiconductor device
JPS5473584A (en) Semiconductor device and production of the same
JPS5735318A (en) Manufacture of semiconductor device
JPS56110267A (en) Semiconductor device
JPS5766672A (en) Semiconductor device
JPS5687986A (en) Solidstate image pickup device and its manufacture
JPS5664467A (en) Mos type semiconductor device
JPS5664450A (en) Semiconductor device
JPS5645066A (en) Semiconductor device and manufacture therefor
JPS5671954A (en) Mos type semiconductor device
JPS5662382A (en) Hall element
JPS558036A (en) Electrode formation
JPS5646558A (en) Semiconductor device
JPS55125648A (en) Semiconductor integrated circuit
JPS55143068A (en) Insulated gate semiconductor device
JPS57194548A (en) Manufacture of semiconductor device
JPS5683061A (en) Semiconductor device
JPS5650577A (en) Manufacture of semiconductor device
JPS5673453A (en) Semiconductor device
JPS5771171A (en) Semiconductor device