JPS5766672A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5766672A
JPS5766672A JP14171380A JP14171380A JPS5766672A JP S5766672 A JPS5766672 A JP S5766672A JP 14171380 A JP14171380 A JP 14171380A JP 14171380 A JP14171380 A JP 14171380A JP S5766672 A JPS5766672 A JP S5766672A
Authority
JP
Japan
Prior art keywords
layer
wire
source
electrode
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14171380A
Other languages
Japanese (ja)
Other versions
JPS6160588B2 (en
Inventor
Toru Mochizuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP14171380A priority Critical patent/JPS5766672A/en
Publication of JPS5766672A publication Critical patent/JPS5766672A/en
Publication of JPS6160588B2 publication Critical patent/JPS6160588B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To accelerate the operation of a semiconductor device and to increase the number of multilayers of a wire by forming a source electrode, a drain electrode and a wire of metallic silicide on the same surface as a silicon layer having source and drain regions. CONSTITUTION:A P type Si layer is formed on a sapphire substrate 1, Mo ions are injected selectively on the Si layer to convert it into MoSi2, thereby forming a source electrode 4, a drain electrode 5 and a wire 6. Subsequently, oxidized films 71, 72 are formed on the Si layer, an MoSi2 film is formed by sputtering method, and the leading wires 9, 10 of gate electrode 8 and electrodes 4, 5 are formed. Further, arsenic ions are injected into the Si layer to form a source region 11 and a drain region 12, the entirety is covered with an Si oxidized film 13, and a wire 14 is formed, thereby obtaining an SOSMOSFET.
JP14171380A 1980-10-09 1980-10-09 Semiconductor device Granted JPS5766672A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14171380A JPS5766672A (en) 1980-10-09 1980-10-09 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14171380A JPS5766672A (en) 1980-10-09 1980-10-09 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5766672A true JPS5766672A (en) 1982-04-22
JPS6160588B2 JPS6160588B2 (en) 1986-12-22

Family

ID=15298461

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14171380A Granted JPS5766672A (en) 1980-10-09 1980-10-09 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5766672A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6279617A (en) * 1985-10-03 1987-04-13 Hitachi Ltd Semiconductor device and manufacture thereof
JPH01307270A (en) * 1988-06-06 1989-12-12 Nippon Telegr & Teleph Corp <Ntt> Mis type transistor
JP2009186577A (en) * 2008-02-04 2009-08-20 Oki Semiconductor Co Ltd Optical integrated circuit, optoelectronic integrated circuit, and method of manufacturing the same

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6190662U (en) * 1984-11-20 1986-06-12

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6279617A (en) * 1985-10-03 1987-04-13 Hitachi Ltd Semiconductor device and manufacture thereof
JPH01307270A (en) * 1988-06-06 1989-12-12 Nippon Telegr & Teleph Corp <Ntt> Mis type transistor
JP2009186577A (en) * 2008-02-04 2009-08-20 Oki Semiconductor Co Ltd Optical integrated circuit, optoelectronic integrated circuit, and method of manufacturing the same

Also Published As

Publication number Publication date
JPS6160588B2 (en) 1986-12-22

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