JPS5740967A - Integrated circuit device - Google Patents
Integrated circuit deviceInfo
- Publication number
- JPS5740967A JPS5740967A JP11627480A JP11627480A JPS5740967A JP S5740967 A JPS5740967 A JP S5740967A JP 11627480 A JP11627480 A JP 11627480A JP 11627480 A JP11627480 A JP 11627480A JP S5740967 A JPS5740967 A JP S5740967A
- Authority
- JP
- Japan
- Prior art keywords
- drain
- source
- region
- contact
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 3
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 239000004020 conductor Substances 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To reduce a resistance-occupied area and improve integration degree, by forming a region having a junction between two conductor or a semiconductor and a conductor, and making said region a resistor. CONSTITUTION:Two N<+> type regions or a source 2 and a drain 3 are formed on a main surface of a P type Si substrate 1 by means of ion injection. A polycrystalline Si gate 5 is provided via an SiO2 film 4 on the Si substrate between these two regions apart from the substrate 1. Thick protecting films 6 and 7 of SiO2 are formed to cover the P-N junction surface of the source region 2 and the drain region 3. Each surface contact is opened for the source and the drain. A metal film 9 is formed via an N-polycrystalline Si layer 8 on the source contact. An Al-evaporated wire 10 is applied on the contact resistor and a drain contact to constitute each electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11627480A JPS5740967A (en) | 1980-08-22 | 1980-08-22 | Integrated circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11627480A JPS5740967A (en) | 1980-08-22 | 1980-08-22 | Integrated circuit device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5740967A true JPS5740967A (en) | 1982-03-06 |
Family
ID=14683013
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11627480A Pending JPS5740967A (en) | 1980-08-22 | 1980-08-22 | Integrated circuit device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5740967A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5745967A (en) * | 1980-09-04 | 1982-03-16 | Toshiba Corp | Semiconductor device |
| JPS585356U (en) * | 1981-07-02 | 1983-01-13 | 三洋電機株式会社 | resistance element |
| JPS6441243A (en) * | 1987-08-07 | 1989-02-13 | Nec Corp | Semiconductor integrated circuit |
| JPH01108773A (en) * | 1987-10-21 | 1989-04-26 | Mitsubishi Electric Corp | Semiconductor device |
-
1980
- 1980-08-22 JP JP11627480A patent/JPS5740967A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5745967A (en) * | 1980-09-04 | 1982-03-16 | Toshiba Corp | Semiconductor device |
| JPS585356U (en) * | 1981-07-02 | 1983-01-13 | 三洋電機株式会社 | resistance element |
| JPS6441243A (en) * | 1987-08-07 | 1989-02-13 | Nec Corp | Semiconductor integrated circuit |
| JPH01108773A (en) * | 1987-10-21 | 1989-04-26 | Mitsubishi Electric Corp | Semiconductor device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE3472036D1 (en) | Small area thin film transistor | |
| JPS5457875A (en) | Semiconductor nonvolatile memory device | |
| JPS56125868A (en) | Thin-film semiconductor device | |
| JPS56162875A (en) | Semiconductor device | |
| JPS56150871A (en) | Semiconductor device | |
| JPS5740967A (en) | Integrated circuit device | |
| JPS5748247A (en) | Semiconductor integrated circuit device | |
| JPS5650533A (en) | Semiconductor device | |
| JPS5727069A (en) | Mos type simiconductor device | |
| JPS56125875A (en) | Semiconductor integrated circuit device | |
| JPS57192069A (en) | Insulated gate field effect semiconductor device | |
| JPS5766672A (en) | Semiconductor device | |
| JPS52130580A (en) | High densityintegrated circuit device | |
| JPS57157563A (en) | Semiconductor device | |
| JPS5688366A (en) | Semiconductor device | |
| JPS5766671A (en) | Semiconductor device | |
| JPS55111161A (en) | Semiconductor device and manufacturing method thereof | |
| JPS5676528A (en) | Manufacture of semiconductor device | |
| JPS54134579A (en) | Mis semiconductor device | |
| JPS56131953A (en) | Semiconductor device | |
| JPS566464A (en) | Semiconductor device and manufacture thereof | |
| JPS56111257A (en) | Preparation of insulated gate type semiconductor ic device | |
| JPS5735325A (en) | Semiconductor device and manufacture thereof | |
| JPS5459875A (en) | Semiconductor device | |
| JPS57134971A (en) | Mis type simiconductor device and manufacture of the same |