JPS56131953A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS56131953A JPS56131953A JP3505780A JP3505780A JPS56131953A JP S56131953 A JPS56131953 A JP S56131953A JP 3505780 A JP3505780 A JP 3505780A JP 3505780 A JP3505780 A JP 3505780A JP S56131953 A JPS56131953 A JP S56131953A
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- film
- stepped
- electrode
- type semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To easily obtain a planer type semiconductor device desired withstanding voltage by interposing a stepped insulating film consisting of a field insulating film and a surface protective insulating film covering the partitioned region by the former film. CONSTITUTION:An SiO2 thin film 7 for surface protection is formed in an element forming region partitioned with the field oxide film 6 on an N type Si substrate 1, and connected with thick film 6 with the stepped insulating film. An opening is made in the thin film 7 to make P layer 2 expose, forming an electrode (field plate) 5 extended onto the films 6 and 7. In this case, if P-N junction end 3a is exposed from the substrate surface and P-N junction part 3a covered with electrode 5 via insulating film 7, the insulating film 7 of the pattern is changed to easily obtain stepped insulating film and also desired withstanding voltage planer type semiconductor can be obtained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3505780A JPS56131953A (en) | 1980-03-19 | 1980-03-19 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3505780A JPS56131953A (en) | 1980-03-19 | 1980-03-19 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56131953A true JPS56131953A (en) | 1981-10-15 |
Family
ID=12431400
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3505780A Pending JPS56131953A (en) | 1980-03-19 | 1980-03-19 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56131953A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6055662A (en) * | 1983-09-07 | 1985-03-30 | Seiko Epson Corp | Semiconductor device |
-
1980
- 1980-03-19 JP JP3505780A patent/JPS56131953A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6055662A (en) * | 1983-09-07 | 1985-03-30 | Seiko Epson Corp | Semiconductor device |
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