JPS56131953A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56131953A
JPS56131953A JP3505780A JP3505780A JPS56131953A JP S56131953 A JPS56131953 A JP S56131953A JP 3505780 A JP3505780 A JP 3505780A JP 3505780 A JP3505780 A JP 3505780A JP S56131953 A JPS56131953 A JP S56131953A
Authority
JP
Japan
Prior art keywords
insulating film
film
stepped
electrode
type semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3505780A
Other languages
Japanese (ja)
Inventor
Tadashi Kirisako
Takeshi Fukuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP3505780A priority Critical patent/JPS56131953A/en
Publication of JPS56131953A publication Critical patent/JPS56131953A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76897Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To easily obtain a planer type semiconductor device desired withstanding voltage by interposing a stepped insulating film consisting of a field insulating film and a surface protective insulating film covering the partitioned region by the former film. CONSTITUTION:An SiO2 thin film 7 for surface protection is formed in an element forming region partitioned with the field oxide film 6 on an N type Si substrate 1, and connected with thick film 6 with the stepped insulating film. An opening is made in the thin film 7 to make P layer 2 expose, forming an electrode (field plate) 5 extended onto the films 6 and 7. In this case, if P-N junction end 3a is exposed from the substrate surface and P-N junction part 3a covered with electrode 5 via insulating film 7, the insulating film 7 of the pattern is changed to easily obtain stepped insulating film and also desired withstanding voltage planer type semiconductor can be obtained.
JP3505780A 1980-03-19 1980-03-19 Semiconductor device Pending JPS56131953A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3505780A JPS56131953A (en) 1980-03-19 1980-03-19 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3505780A JPS56131953A (en) 1980-03-19 1980-03-19 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS56131953A true JPS56131953A (en) 1981-10-15

Family

ID=12431400

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3505780A Pending JPS56131953A (en) 1980-03-19 1980-03-19 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56131953A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6055662A (en) * 1983-09-07 1985-03-30 Seiko Epson Corp Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6055662A (en) * 1983-09-07 1985-03-30 Seiko Epson Corp Semiconductor device

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