JPS57102069A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57102069A
JPS57102069A JP17918780A JP17918780A JPS57102069A JP S57102069 A JPS57102069 A JP S57102069A JP 17918780 A JP17918780 A JP 17918780A JP 17918780 A JP17918780 A JP 17918780A JP S57102069 A JPS57102069 A JP S57102069A
Authority
JP
Japan
Prior art keywords
thickness
field plate
section
junction
silicon oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17918780A
Other languages
Japanese (ja)
Inventor
Yukio Higaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP17918780A priority Critical patent/JPS57102069A/en
Publication of JPS57102069A publication Critical patent/JPS57102069A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To realize the increase of dielectric resistance by a field plate without decreasing a passivation effect by insulating films by making the thickness of the insulating film of a section just under the field plate thinner than the thickness of the insulating film of a section covering a junction. CONSTITUTION:The thickness of the silicon oxide film in the vicinity of a section reaching the silicon oxide film 2 of a depletion layer 5 is made thinner than other sections, and an electric field by the field plate 3' is intensified. Accordingly, the depletion layer 5 is easy to extend near the surface, the concentration of an electric field to a P-N junction is relaxed, and high dielectric resistance is attained.
JP17918780A 1980-12-17 1980-12-17 Semiconductor device Pending JPS57102069A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17918780A JPS57102069A (en) 1980-12-17 1980-12-17 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17918780A JPS57102069A (en) 1980-12-17 1980-12-17 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS57102069A true JPS57102069A (en) 1982-06-24

Family

ID=16061453

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17918780A Pending JPS57102069A (en) 1980-12-17 1980-12-17 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57102069A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6115760U (en) * 1984-07-04 1986-01-29 三洋電機株式会社 Semiconductor integrated circuit device
JPS6115761U (en) * 1984-07-04 1986-01-29 三洋電機株式会社 Semiconductor integrated circuit device
JPS61108167A (en) * 1984-11-01 1986-05-26 Mitsubishi Electric Corp Electrode structure of npn transistor
US5665634A (en) * 1993-04-28 1997-09-09 Harris Corporation Method of increasing maximum terminal voltage of a semiconductor device
JP2016152255A (en) * 2015-02-16 2016-08-22 ルネサスエレクトロニクス株式会社 Semiconductor device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4958785A (en) * 1972-10-04 1974-06-07
JPS4979480A (en) * 1972-12-06 1974-07-31
JPS4991776A (en) * 1973-01-05 1974-09-02
JPS5578532A (en) * 1978-12-07 1980-06-13 Matsushita Electronics Corp Formation of electrode for semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4958785A (en) * 1972-10-04 1974-06-07
JPS4979480A (en) * 1972-12-06 1974-07-31
JPS4991776A (en) * 1973-01-05 1974-09-02
JPS5578532A (en) * 1978-12-07 1980-06-13 Matsushita Electronics Corp Formation of electrode for semiconductor device

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6115760U (en) * 1984-07-04 1986-01-29 三洋電機株式会社 Semiconductor integrated circuit device
JPS6115761U (en) * 1984-07-04 1986-01-29 三洋電機株式会社 Semiconductor integrated circuit device
JPH0440272Y2 (en) * 1984-07-04 1992-09-21
JPH0440273Y2 (en) * 1984-07-04 1992-09-21
JPS61108167A (en) * 1984-11-01 1986-05-26 Mitsubishi Electric Corp Electrode structure of npn transistor
US5665634A (en) * 1993-04-28 1997-09-09 Harris Corporation Method of increasing maximum terminal voltage of a semiconductor device
US6008512A (en) * 1993-04-28 1999-12-28 Intersil Corporation Semiconductor device with increased maximum terminal voltage
JP2016152255A (en) * 2015-02-16 2016-08-22 ルネサスエレクトロニクス株式会社 Semiconductor device
CN105895669A (en) * 2015-02-16 2016-08-24 瑞萨电子株式会社 Semiconductor device
US10153274B2 (en) 2015-02-16 2018-12-11 Renesas Electronics Corporation Semiconductor device

Similar Documents

Publication Publication Date Title
JPS56169368A (en) High withstand voltage mos field effect semiconductor device
JPS57102069A (en) Semiconductor device
JPS5727068A (en) Mos type semiconductor device
JPS54109785A (en) Semiconductor device
JPS56165359A (en) Semiconductor device
JPS5727069A (en) Mos type simiconductor device
JPS5632757A (en) Insulated gate type transistor and integrated circuit
JPS53126875A (en) Gate protecting device
JPS56125875A (en) Semiconductor integrated circuit device
JPS57133677A (en) Semiconductor integrated circuit device
JPS57157563A (en) Semiconductor device
JPS56165358A (en) Semiconductor device
JPS54107270A (en) Semiconductor device and its production
JPS5339088A (en) Insulated gate type field effect semiconductor device
JPS55110056A (en) Semiconductor device
JPS5466089A (en) Semiconductor capacitor device
JPS5793525A (en) Manufacture of semiconductor device
JPS5539631A (en) Semiconductor device
JPS56147469A (en) Semiconductor device
JPS56112756A (en) Manufacture of complementary insulating gate field effect semiconductor device
JPS54129984A (en) Manufacture of semiconductor device
JPS5642372A (en) Manufacture of semiconductor device
JPS5562770A (en) Insulating gate type field-effect semiconductor device and its preparation
JPS5339073A (en) Semiconductor device
JPS575346A (en) Semiconductor device and manufacture thereof