JPS57157563A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS57157563A JPS57157563A JP4291681A JP4291681A JPS57157563A JP S57157563 A JPS57157563 A JP S57157563A JP 4291681 A JP4291681 A JP 4291681A JP 4291681 A JP4291681 A JP 4291681A JP S57157563 A JPS57157563 A JP S57157563A
- Authority
- JP
- Japan
- Prior art keywords
- groove
- film
- junction
- regions
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 239000000758 substrate Substances 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
- H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Read Only Memory (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Abstract
PURPOSE:To reduce a leakage current of a semiconductor device due to a light produced at a P-N junction by forming a light shielding means on a semiconductor region formed with a P-N junction and largely reducing or shielding a light incident to the P-N junction. CONSTITUTION:N<+> type drain and source regions 211, 212 are diffused and formed in a P type semiconductor substrate 24, and a gate electrode 28 made of polycrystalline Si is covered through a gate SiO2 film 27 on a channel region disposed between the drain and source regions. Subsequently, a field SiO2 film 29 is formed around the regions 211, 212, and a groove 30 which surrounds the three sides of the regions 211, 212 and reaches at the end the surface of the substrate 24 is formed at the film 29. Thereafter, an SiO2 film 25 is accumulated on the surface of the substrate 24 except the groove 30, and an insulating layer 26 containing P is accumulated in the prescribed thickness in the groove 30 and on the surface of the film 25. In this manner, a new groove 31 which does not reach the surface of the substrate 24 at the end of the film 26 is formed, and aluminum conductive layers 231, 232 which cover the P-N junction through contacting holes 221, 222 are respectively covered on the regions 211, 212 while burying the groove 30.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4291681A JPS57157563A (en) | 1981-03-24 | 1981-03-24 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4291681A JPS57157563A (en) | 1981-03-24 | 1981-03-24 | Semiconductor device |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60057712A Division JPS60242679A (en) | 1985-03-22 | 1985-03-22 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57157563A true JPS57157563A (en) | 1982-09-29 |
| JPH0258785B2 JPH0258785B2 (en) | 1990-12-10 |
Family
ID=12649336
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4291681A Granted JPS57157563A (en) | 1981-03-24 | 1981-03-24 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57157563A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0108480A2 (en) * | 1982-11-01 | 1984-05-16 | Kabushiki Kaisha Toshiba | Photoelectric conversion element |
| JPS6292477A (en) * | 1985-10-18 | 1987-04-27 | Nec Corp | Manufacture of semiconductor memory |
| JP2011233913A (en) * | 2011-07-04 | 2011-11-17 | Getner Foundation Llc | Non-volatile storage and method for manufacturing the same |
-
1981
- 1981-03-24 JP JP4291681A patent/JPS57157563A/en active Granted
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0108480A2 (en) * | 1982-11-01 | 1984-05-16 | Kabushiki Kaisha Toshiba | Photoelectric conversion element |
| US4672221A (en) * | 1982-11-01 | 1987-06-09 | Tokyo Shibaura Denki Kabushiki Kaisha | Photoelectric conversion element with light shielding conductive layer |
| JPS6292477A (en) * | 1985-10-18 | 1987-04-27 | Nec Corp | Manufacture of semiconductor memory |
| JPH0453111B2 (en) * | 1985-10-18 | 1992-08-25 | Nippon Electric Co | |
| JP2011233913A (en) * | 2011-07-04 | 2011-11-17 | Getner Foundation Llc | Non-volatile storage and method for manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0258785B2 (en) | 1990-12-10 |
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