JPS57114292A - Thin film image pickup element - Google Patents

Thin film image pickup element

Info

Publication number
JPS57114292A
JPS57114292A JP56000162A JP16281A JPS57114292A JP S57114292 A JPS57114292 A JP S57114292A JP 56000162 A JP56000162 A JP 56000162A JP 16281 A JP16281 A JP 16281A JP S57114292 A JPS57114292 A JP S57114292A
Authority
JP
Japan
Prior art keywords
electrode
layer
covering
thin film
pickup element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56000162A
Other languages
Japanese (ja)
Other versions
JPS6258550B2 (en
Inventor
Toshihisa Hamano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Business Innovation Corp
Original Assignee
Fuji Xerox Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Xerox Co Ltd filed Critical Fuji Xerox Co Ltd
Priority to JP56000162A priority Critical patent/JPS57114292A/en
Priority to US06/336,991 priority patent/US4471371A/en
Publication of JPS57114292A publication Critical patent/JPS57114292A/en
Priority to US06/582,642 priority patent/US4517733A/en
Publication of JPS6258550B2 publication Critical patent/JPS6258550B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N1/00—Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
    • H04N1/024—Details of scanning heads ; Means for illuminating the original
    • H04N1/028—Details of scanning heads ; Means for illuminating the original for picture information pick-up
    • H04N1/02805—Details of scanning heads ; Means for illuminating the original for picture information pick-up with photodetectors arranged in a two-dimensional array
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14665—Imagers using a photoconductor layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the Schottky type
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N1/00—Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
    • H04N1/024—Details of scanning heads ; Means for illuminating the original
    • H04N1/028—Details of scanning heads ; Means for illuminating the original for picture information pick-up

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Facsimile Heads (AREA)

Abstract

PURPOSE:To reduce the size of an impage pickup element by superposing a photoelectric converter on a substrate made of glass or ceramics and further forming a switching unit of thin film and a wire of multilayer on the upper side of the converter CONSTITUTION:A photoelectric converter 13 is formed via a transparent substrate 1, a transparent electrode 2, the first semiconductor layer 3, an opaque electrode 5 and the first insulator film 6. There are further formed the first top electrode 7a contacted with the upper surface of the first insulator layer 6 and connected through a contacting hole 16 with the electrode 5, the second upper electrode 7b faced with the electrode 7a, and the second semiconductor layer 8 covering the electrodes. There are further formed the second insulator layer 9 covering the layer 8, a gate electrode 10 contacted on the upper surface of the layer 9 and formed to cotrol the current channel, and a passivation film 11 covering the electrpdes to form a switching element 12.
JP56000162A 1981-01-06 1981-01-06 Thin film image pickup element Granted JPS57114292A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP56000162A JPS57114292A (en) 1981-01-06 1981-01-06 Thin film image pickup element
US06/336,991 US4471371A (en) 1981-01-06 1982-01-04 Thin film image pickup element
US06/582,642 US4517733A (en) 1981-01-06 1984-02-22 Process for fabricating thin film image pick-up element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56000162A JPS57114292A (en) 1981-01-06 1981-01-06 Thin film image pickup element

Publications (2)

Publication Number Publication Date
JPS57114292A true JPS57114292A (en) 1982-07-16
JPS6258550B2 JPS6258550B2 (en) 1987-12-07

Family

ID=11466338

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56000162A Granted JPS57114292A (en) 1981-01-06 1981-01-06 Thin film image pickup element

Country Status (1)

Country Link
JP (1) JPS57114292A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59126666A (en) * 1983-01-10 1984-07-21 Seiko Epson Corp Solid-image sensor
JPS59185474A (en) * 1983-04-04 1984-10-22 Seiko Epson Corp Solid-state image sensor
JPS59188168A (en) * 1983-04-08 1984-10-25 Seiko Epson Corp Solid state image sensor
EP0177275A2 (en) * 1984-09-29 1986-04-09 Kabushiki Kaisha Toshiba Photosensor suited for image sensor
JPH0620568U (en) * 1992-02-29 1994-03-18 株式会社ノーリツ Extension device for drain trap
JP2011139069A (en) * 2009-12-30 2011-07-14 Commissariat A L'energie Atomique & Aux Energies Alternatives Integrated diamond transduction pixelized imaging device and method of manufacturing the same

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59126666A (en) * 1983-01-10 1984-07-21 Seiko Epson Corp Solid-image sensor
JPS59185474A (en) * 1983-04-04 1984-10-22 Seiko Epson Corp Solid-state image sensor
JPS59188168A (en) * 1983-04-08 1984-10-25 Seiko Epson Corp Solid state image sensor
JPH0526347B2 (en) * 1983-04-08 1993-04-15 Seiko Epson Corp
EP0177275A2 (en) * 1984-09-29 1986-04-09 Kabushiki Kaisha Toshiba Photosensor suited for image sensor
US4823178A (en) * 1984-09-29 1989-04-18 Kabushiki Kaisha Toshiba Photosensor suited for image sensor
JPH0620568U (en) * 1992-02-29 1994-03-18 株式会社ノーリツ Extension device for drain trap
JP2011139069A (en) * 2009-12-30 2011-07-14 Commissariat A L'energie Atomique & Aux Energies Alternatives Integrated diamond transduction pixelized imaging device and method of manufacturing the same
JP2017120266A (en) * 2009-12-30 2017-07-06 コミッサリア ア レネルジー アトミーク エ オ ゼネルジ ザルタナテイヴ Integrated diamond conversion pixelated imaging device and method of manufacturing the same

Also Published As

Publication number Publication date
JPS6258550B2 (en) 1987-12-07

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