JPS57100770A - Switching element - Google Patents

Switching element

Info

Publication number
JPS57100770A
JPS57100770A JP55177894A JP17789480A JPS57100770A JP S57100770 A JPS57100770 A JP S57100770A JP 55177894 A JP55177894 A JP 55177894A JP 17789480 A JP17789480 A JP 17789480A JP S57100770 A JPS57100770 A JP S57100770A
Authority
JP
Japan
Prior art keywords
switching element
semiconductor layer
upper electrode
electrodes
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55177894A
Other languages
Japanese (ja)
Other versions
JPH0357456B2 (en
Inventor
Hajime Kurihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP55177894A priority Critical patent/JPS57100770A/en
Publication of JPS57100770A publication Critical patent/JPS57100770A/en
Publication of JPH0357456B2 publication Critical patent/JPH0357456B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Liquid Crystal (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)

Abstract

PURPOSE:To increase ON.OFF current ratio by electrically separating either one of an upper electrode or a lower electrode into two to form the lead electrodes for an external circuit in a switching element having a semiconductor layer between the upper electrode and the lower electrode. CONSTITUTION:Lower electrodes 32, 32' electrically separated into two are provided on a substrate 31 and a semiconductor layer 33 consisting of an amorphous semiconductor thin film and an upper electrode 34 are formed on the lower electrodes 32, 32'. Both lower electrodes 32, 32' are electrically separated with a thickness of twice the semiconductor layer to form the lead electrodes for an external circuit. In this way, a switching element having a small difference between ON voltage and OFF voltage and high ON and OFF current ratio at the time of switching can manufactured.
JP55177894A 1980-12-16 1980-12-16 Switching element Granted JPS57100770A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55177894A JPS57100770A (en) 1980-12-16 1980-12-16 Switching element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55177894A JPS57100770A (en) 1980-12-16 1980-12-16 Switching element

Publications (2)

Publication Number Publication Date
JPS57100770A true JPS57100770A (en) 1982-06-23
JPH0357456B2 JPH0357456B2 (en) 1991-09-02

Family

ID=16038914

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55177894A Granted JPS57100770A (en) 1980-12-16 1980-12-16 Switching element

Country Status (1)

Country Link
JP (1) JPS57100770A (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6165481A (en) * 1984-09-07 1986-04-04 Semiconductor Energy Lab Co Ltd Semiconductor device
JPS6165482A (en) * 1984-09-07 1986-04-04 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
JPS61116880A (en) * 1984-11-13 1986-06-04 Fujitsu Ltd Amorphous silicon varistor
JPS6373290A (en) * 1986-09-17 1988-04-02 コニカ株式会社 Element for active matrix
US5070379A (en) * 1989-06-29 1991-12-03 Oki Electric Industry Co., Ltd. Thin-film transistor matrix for active matrix display panel with alloy electrodes
US5225364A (en) * 1989-06-26 1993-07-06 Oki Electric Industry Co., Ltd. Method of fabricating a thin-film transistor matrix for an active matrix display panel
JPH0774372A (en) * 1994-03-10 1995-03-17 Citizen Watch Co Ltd Thin film diode and manufacture thereof
JPH0774374A (en) * 1994-03-10 1995-03-17 Citizen Watch Co Ltd Thin film diode and manufacture thereof
JPH0774373A (en) * 1994-03-10 1995-03-17 Citizen Watch Co Ltd Thin film diode and manufacture thereof
US6885027B2 (en) 1994-06-02 2005-04-26 Semiconductor Energy Laboratory Co., Ltd. Active matrix display and electrooptical device
JP2005236286A (en) * 2004-02-16 2005-09-02 Hynix Semiconductor Inc Memory device utilizing multiple layer nano tube cell
JP2005235377A (en) * 2004-02-16 2005-09-02 Hynix Semiconductor Inc Memory apparatus using nanotube cell

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5477083A (en) * 1977-12-02 1979-06-20 Hitachi Ltd Photoelectric transducer
JPS54109762A (en) * 1978-02-16 1979-08-28 Sony Corp Semiconductor device
JPS55107276A (en) * 1979-02-09 1980-08-16 Sanyo Electric Co Ltd Photoelectromotive force device
JPS56129381A (en) * 1980-03-14 1981-10-09 Fujitsu Ltd Photoidentifying device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5477083A (en) * 1977-12-02 1979-06-20 Hitachi Ltd Photoelectric transducer
JPS54109762A (en) * 1978-02-16 1979-08-28 Sony Corp Semiconductor device
JPS55107276A (en) * 1979-02-09 1980-08-16 Sanyo Electric Co Ltd Photoelectromotive force device
JPS56129381A (en) * 1980-03-14 1981-10-09 Fujitsu Ltd Photoidentifying device

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6165481A (en) * 1984-09-07 1986-04-04 Semiconductor Energy Lab Co Ltd Semiconductor device
JPS6165482A (en) * 1984-09-07 1986-04-04 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
JPS61116880A (en) * 1984-11-13 1986-06-04 Fujitsu Ltd Amorphous silicon varistor
JPS6373290A (en) * 1986-09-17 1988-04-02 コニカ株式会社 Element for active matrix
US5225364A (en) * 1989-06-26 1993-07-06 Oki Electric Industry Co., Ltd. Method of fabricating a thin-film transistor matrix for an active matrix display panel
US5070379A (en) * 1989-06-29 1991-12-03 Oki Electric Industry Co., Ltd. Thin-film transistor matrix for active matrix display panel with alloy electrodes
JPH0774372A (en) * 1994-03-10 1995-03-17 Citizen Watch Co Ltd Thin film diode and manufacture thereof
JPH0774374A (en) * 1994-03-10 1995-03-17 Citizen Watch Co Ltd Thin film diode and manufacture thereof
JPH0774373A (en) * 1994-03-10 1995-03-17 Citizen Watch Co Ltd Thin film diode and manufacture thereof
US6885027B2 (en) 1994-06-02 2005-04-26 Semiconductor Energy Laboratory Co., Ltd. Active matrix display and electrooptical device
US7148506B2 (en) 1994-06-02 2006-12-12 Semiconductor Energy Laboratory Co., Ltd. Active matrix display and electrooptical device
US7459724B2 (en) 1994-06-02 2008-12-02 Semiconductor Energy Laboratory Co., Ltd. Active matrix display and electrooptical device
JP2005236286A (en) * 2004-02-16 2005-09-02 Hynix Semiconductor Inc Memory device utilizing multiple layer nano tube cell
JP2005235377A (en) * 2004-02-16 2005-09-02 Hynix Semiconductor Inc Memory apparatus using nanotube cell

Also Published As

Publication number Publication date
JPH0357456B2 (en) 1991-09-02

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