JPS54109762A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS54109762A
JPS54109762A JP1674878A JP1674878A JPS54109762A JP S54109762 A JPS54109762 A JP S54109762A JP 1674878 A JP1674878 A JP 1674878A JP 1674878 A JP1674878 A JP 1674878A JP S54109762 A JPS54109762 A JP S54109762A
Authority
JP
Japan
Prior art keywords
specific resistance
region
amorphous layer
type
omegacm
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1674878A
Other languages
Japanese (ja)
Other versions
JPS6248390B2 (en
Inventor
Setsuo Usui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP1674878A priority Critical patent/JPS54109762A/en
Publication of JPS54109762A publication Critical patent/JPS54109762A/en
Publication of JPS6248390B2 publication Critical patent/JPS6248390B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Recrystallisation Techniques (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To obtain the diode without using the crystal material by providing the uni-conducting low specific resistance 1st region which is the noncrystal semiconductor and varies in proportion to -1/4 power of the temperature degree K in terms of the specific resistance onto the quartz substrate and then providing the reverse- conducting low specific resistance 2nd region of the noncrystal semiconductor via the noncrystal semiconductor high specific resistance region on the 1st region. CONSTITUTION:The PN-junction diode is formed with the amorphous layer with no use of the crystal material, and the amorphous layer featuring an extremely small state density of under 10<16>OMEGAcm is provided on the interface between the P-type and N-type regions. Thus, the charge transfer up to the interface is carried out via the variable range hopping mechanism. In this connection, the specific resistance of N-type low specific resistance amorphous layer 7 provided on substrate 5 of the quartz or the like is set to the value which is nearly proportional to -1/4 power of the temperature degree K, and then P-type amorphous layer 9 of under 10<16>OMEGAcm is grown on layer 7 via intrinsic amonphous layer 8 of 10<16>OMEGAcm.
JP1674878A 1978-02-16 1978-02-16 Semiconductor device Granted JPS54109762A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1674878A JPS54109762A (en) 1978-02-16 1978-02-16 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1674878A JPS54109762A (en) 1978-02-16 1978-02-16 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS54109762A true JPS54109762A (en) 1979-08-28
JPS6248390B2 JPS6248390B2 (en) 1987-10-13

Family

ID=11924880

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1674878A Granted JPS54109762A (en) 1978-02-16 1978-02-16 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS54109762A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57100770A (en) * 1980-12-16 1982-06-23 Seiko Epson Corp Switching element
JPS57102076A (en) * 1980-12-17 1982-06-24 Seiko Epson Corp Switching element
JPS57113296A (en) * 1980-12-29 1982-07-14 Seiko Epson Corp Switching element
JPS5890790A (en) * 1981-08-07 1983-05-30 ザ　ブリテイッシュ　ペトロレアム　カンパニ−　ピ−．エル．シ− Semiconductor device
JPS61295565A (en) * 1985-06-25 1986-12-26 Toshiba Corp Photoconductive member
JPS61295570A (en) * 1985-06-25 1986-12-26 Toshiba Corp Photoconductive member
JPS62279672A (en) * 1986-05-28 1987-12-04 Kanegafuchi Chem Ind Co Ltd Semiconductor device
JPH05343318A (en) * 1980-09-16 1993-12-24 Semiconductor Energy Lab Co Ltd Semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5216990A (en) * 1975-07-28 1977-02-08 Rca Corp Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5216990A (en) * 1975-07-28 1977-02-08 Rca Corp Semiconductor device

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05343318A (en) * 1980-09-16 1993-12-24 Semiconductor Energy Lab Co Ltd Semiconductor device
JPS57100770A (en) * 1980-12-16 1982-06-23 Seiko Epson Corp Switching element
JPH0357456B2 (en) * 1980-12-16 1991-09-02 Seiko Epson Corp
JPS57102076A (en) * 1980-12-17 1982-06-24 Seiko Epson Corp Switching element
JPS57113296A (en) * 1980-12-29 1982-07-14 Seiko Epson Corp Switching element
JPS5890790A (en) * 1981-08-07 1983-05-30 ザ　ブリテイッシュ　ペトロレアム　カンパニ−　ピ−．エル．シ− Semiconductor device
JPH0478028B2 (en) * 1981-08-07 1992-12-10 Buriteitsushu Pitorooriamu Co Plc Za
JPS61295565A (en) * 1985-06-25 1986-12-26 Toshiba Corp Photoconductive member
JPS61295570A (en) * 1985-06-25 1986-12-26 Toshiba Corp Photoconductive member
JPH0715587B2 (en) * 1985-06-25 1995-02-22 株式会社東芝 Photoconductive member
JPS62279672A (en) * 1986-05-28 1987-12-04 Kanegafuchi Chem Ind Co Ltd Semiconductor device

Also Published As

Publication number Publication date
JPS6248390B2 (en) 1987-10-13

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