JPS52124888A - Production of solar battery - Google Patents

Production of solar battery

Info

Publication number
JPS52124888A
JPS52124888A JP4160776A JP4160776A JPS52124888A JP S52124888 A JPS52124888 A JP S52124888A JP 4160776 A JP4160776 A JP 4160776A JP 4160776 A JP4160776 A JP 4160776A JP S52124888 A JPS52124888 A JP S52124888A
Authority
JP
Japan
Prior art keywords
production
solar battery
increase
polycrystalline
diffusing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4160776A
Other languages
Japanese (ja)
Inventor
Takayoshi Mamine
Takeshi Matsushita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP4160776A priority Critical patent/JPS52124888A/en
Publication of JPS52124888A publication Critical patent/JPS52124888A/en
Pending legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells

Abstract

PURPOSE: To shallow the position of a PN junction, increase the sensitivity on the short wavelength side and increase conversion efficiency by diffusing an impurity through the polycrystalline Si layer of 45 to 50% in O2 concentration formed on a semiconductor substrate.
COPYRIGHT: (C)1977,JPO&Japio
JP4160776A 1976-04-13 1976-04-13 Production of solar battery Pending JPS52124888A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4160776A JPS52124888A (en) 1976-04-13 1976-04-13 Production of solar battery

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4160776A JPS52124888A (en) 1976-04-13 1976-04-13 Production of solar battery

Publications (1)

Publication Number Publication Date
JPS52124888A true JPS52124888A (en) 1977-10-20

Family

ID=12613040

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4160776A Pending JPS52124888A (en) 1976-04-13 1976-04-13 Production of solar battery

Country Status (1)

Country Link
JP (1) JPS52124888A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6195577A (en) * 1984-10-16 1986-05-14 Sanyo Electric Co Ltd Amorphous photovoltaic element
JPH02216874A (en) * 1989-02-17 1990-08-29 Hitachi Ltd Silicon crystalline solar cell
JPH03102749U (en) * 1990-02-08 1991-10-25
JPH05110121A (en) * 1991-10-17 1993-04-30 Sharp Corp Solar cell

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6195577A (en) * 1984-10-16 1986-05-14 Sanyo Electric Co Ltd Amorphous photovoltaic element
JPH0574950B2 (en) * 1984-10-16 1993-10-19 Sanyo Electric Co
JPH02216874A (en) * 1989-02-17 1990-08-29 Hitachi Ltd Silicon crystalline solar cell
JPH03102749U (en) * 1990-02-08 1991-10-25
JPH05110121A (en) * 1991-10-17 1993-04-30 Sharp Corp Solar cell

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