JPS5310987A - Photoelectric transducing semiconductor device - Google Patents

Photoelectric transducing semiconductor device

Info

Publication number
JPS5310987A
JPS5310987A JP8553276A JP8553276A JPS5310987A JP S5310987 A JPS5310987 A JP S5310987A JP 8553276 A JP8553276 A JP 8553276A JP 8553276 A JP8553276 A JP 8553276A JP S5310987 A JPS5310987 A JP S5310987A
Authority
JP
Japan
Prior art keywords
semiconductor device
photoelectric transducing
transducing semiconductor
carriers
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8553276A
Other languages
Japanese (ja)
Inventor
Takeshi Matsushita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP8553276A priority Critical patent/JPS5310987A/en
Publication of JPS5310987A publication Critical patent/JPS5310987A/en
Pending legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

PURPOSE: To reduce the surface recombination of carriers, lower the series resistance of diffused layers and increase conversion efficiency by providing a low impurity concentration layer having a thickness smaller than the diffusion length of minority carriers between PN junction and semiconductor surface.
COPYRIGHT: (C)1978,JPO&Japio
JP8553276A 1976-07-16 1976-07-16 Photoelectric transducing semiconductor device Pending JPS5310987A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8553276A JPS5310987A (en) 1976-07-16 1976-07-16 Photoelectric transducing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8553276A JPS5310987A (en) 1976-07-16 1976-07-16 Photoelectric transducing semiconductor device

Publications (1)

Publication Number Publication Date
JPS5310987A true JPS5310987A (en) 1978-01-31

Family

ID=13861488

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8553276A Pending JPS5310987A (en) 1976-07-16 1976-07-16 Photoelectric transducing semiconductor device

Country Status (1)

Country Link
JP (1) JPS5310987A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03292774A (en) * 1990-04-10 1991-12-24 Nec Corp Infrared ray detector
JP2018518838A (en) * 2015-12-29 2018-07-12 同方威視技術股▲分▼有限公司 Coplanar electrode photodiode array and manufacturing method thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03292774A (en) * 1990-04-10 1991-12-24 Nec Corp Infrared ray detector
JP2018518838A (en) * 2015-12-29 2018-07-12 同方威視技術股▲分▼有限公司 Coplanar electrode photodiode array and manufacturing method thereof
US10411051B2 (en) 2015-12-29 2019-09-10 Nuctech Company Limited Coplanar electrode photodiode array and manufacturing method thereof

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