JPS5583271A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5583271A JPS5583271A JP15651678A JP15651678A JPS5583271A JP S5583271 A JPS5583271 A JP S5583271A JP 15651678 A JP15651678 A JP 15651678A JP 15651678 A JP15651678 A JP 15651678A JP S5583271 A JPS5583271 A JP S5583271A
- Authority
- JP
- Japan
- Prior art keywords
- film
- region
- type
- coated
- impurity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
Abstract
PURPOSE: To increase the current capacity of a semiconductor device by forming a p-type buried layer forming a zener diode particularly in high impurity density to thereby reduce dynamic resistance thereof to thus reduce noise thereat.
CONSTITUTION: An oxide film 21 is coated on a p-type silicon substrate 20, openings are perforated at the film 21, thin oxide films 22 are formed thereat, and n-type impurity ion is implanted through the film 22 to thereby form an n--type region 23. Then, the film 22 is modified into an oxide film 24, openings are perforated at the region 23, a BSG film 25 is coated on the entire surface thereof, heat treated, and the impurity is diffused to thereby form a p+-type region 26 in the region 23. Then, the film 25 is removed, an n-type layer 27 is epitaxially grown on the entire surface thereof, an oxide film 28 is coated thereon, the BSG film 29 is again coated thereon, heat treated to thereby diffuse the impurity into the region 26 to thereby form two p+-type regions 30 and 31 reaching the region 26. Then, the film 29 is removed, an oxide film 32 is newly formed on the layer 27, a BSG film 29' is coated thereon, openings are perforated thereat, n-type impurity is adhered thereto to thereby form an n+-type region 34 not superimposed with the region 31 being larger than the high density buried region 30.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15651678A JPS5583271A (en) | 1978-12-20 | 1978-12-20 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15651678A JPS5583271A (en) | 1978-12-20 | 1978-12-20 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5583271A true JPS5583271A (en) | 1980-06-23 |
Family
ID=15629478
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15651678A Pending JPS5583271A (en) | 1978-12-20 | 1978-12-20 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5583271A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5732678A (en) * | 1980-08-05 | 1982-02-22 | Fujitsu Ltd | Semiconductor device |
JPS5880875A (en) * | 1981-11-09 | 1983-05-16 | Mitsubishi Electric Corp | Constant-voltage diode for semiconductor integrated circuit |
JPS58132981A (en) * | 1982-02-02 | 1983-08-08 | Seiko Instr & Electronics Ltd | Zener diode |
JPS60249375A (en) * | 1984-05-09 | 1985-12-10 | アナログ デバイセス インコーポレーテツド | Ion implanting method for forming ic wafer having buried zener diode and ic structure formed by same method |
US5024955A (en) * | 1989-01-19 | 1991-06-18 | Toko, Inc. | Variable-capacitance diode element having wide capacitance variation range |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5384A (en) * | 1976-06-23 | 1978-01-05 | Nec Corp | Semiconductor device |
-
1978
- 1978-12-20 JP JP15651678A patent/JPS5583271A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5384A (en) * | 1976-06-23 | 1978-01-05 | Nec Corp | Semiconductor device |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5732678A (en) * | 1980-08-05 | 1982-02-22 | Fujitsu Ltd | Semiconductor device |
JPH0219629B2 (en) * | 1980-08-05 | 1990-05-02 | Fujitsu Ltd | |
JPS5880875A (en) * | 1981-11-09 | 1983-05-16 | Mitsubishi Electric Corp | Constant-voltage diode for semiconductor integrated circuit |
JPS58132981A (en) * | 1982-02-02 | 1983-08-08 | Seiko Instr & Electronics Ltd | Zener diode |
JPS60249375A (en) * | 1984-05-09 | 1985-12-10 | アナログ デバイセス インコーポレーテツド | Ion implanting method for forming ic wafer having buried zener diode and ic structure formed by same method |
US5024955A (en) * | 1989-01-19 | 1991-06-18 | Toko, Inc. | Variable-capacitance diode element having wide capacitance variation range |
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