JPS52116079A - Heat treatment of semiconductor device - Google Patents
Heat treatment of semiconductor deviceInfo
- Publication number
- JPS52116079A JPS52116079A JP3255776A JP3255776A JPS52116079A JP S52116079 A JPS52116079 A JP S52116079A JP 3255776 A JP3255776 A JP 3255776A JP 3255776 A JP3255776 A JP 3255776A JP S52116079 A JPS52116079 A JP S52116079A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- heat treatment
- wafer
- heavymetals
- gettering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
Abstract
PURPOSE: To obtain a semiconductor device of high performance which is highly reliable and provides less leak currents and noises by forming N type layer on Si wafer having the PN junction by P diffusion followed by heat treatment so as to remove heavymetals in the wafer by gettering.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3255776A JPS52116079A (en) | 1976-03-26 | 1976-03-26 | Heat treatment of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3255776A JPS52116079A (en) | 1976-03-26 | 1976-03-26 | Heat treatment of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS52116079A true JPS52116079A (en) | 1977-09-29 |
Family
ID=12362202
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3255776A Pending JPS52116079A (en) | 1976-03-26 | 1976-03-26 | Heat treatment of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS52116079A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2827330A1 (en) | 1978-06-22 | 1980-01-03 | Itt Ind Gmbh Deutsche | Redn. of broadband noise from semiconductor elements - by subjecting doped elements to controlled heat treatment in nitrogen |
US6562733B2 (en) | 1997-09-30 | 2003-05-13 | Nec Corporation | Semiconductor device manufacturing method |
-
1976
- 1976-03-26 JP JP3255776A patent/JPS52116079A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2827330A1 (en) | 1978-06-22 | 1980-01-03 | Itt Ind Gmbh Deutsche | Redn. of broadband noise from semiconductor elements - by subjecting doped elements to controlled heat treatment in nitrogen |
US6562733B2 (en) | 1997-09-30 | 2003-05-13 | Nec Corporation | Semiconductor device manufacturing method |
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