JPS52111378A - Semi-conductor device - Google Patents

Semi-conductor device

Info

Publication number
JPS52111378A
JPS52111378A JP2765076A JP2765076A JPS52111378A JP S52111378 A JPS52111378 A JP S52111378A JP 2765076 A JP2765076 A JP 2765076A JP 2765076 A JP2765076 A JP 2765076A JP S52111378 A JPS52111378 A JP S52111378A
Authority
JP
Japan
Prior art keywords
semi
conductor device
diffusion area
characteristic
mediary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2765076A
Other languages
Japanese (ja)
Inventor
Takashi Yasujima
Toshio Yonezawa
Masahito Uchida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP2765076A priority Critical patent/JPS52111378A/en
Priority to DE2658304A priority patent/DE2658304C2/en
Priority to NLAANVRAGE7614307,A priority patent/NL171944C/en
Priority to GB23196/79A priority patent/GB1572820A/en
Priority to GB54126/76A priority patent/GB1572819A/en
Priority to FR7639087A priority patent/FR2336795A1/en
Publication of JPS52111378A publication Critical patent/JPS52111378A/en
Priority to US05/915,542 priority patent/US4224636A/en
Pending legal-status Critical Current

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  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To improve insulation film characteristic and noise characteristic by forming a SiC layer over a high concentration phosphorus diffusion area and a given As diffusion area on a semi-conductor base through the inter-mediary of a insulation layer.
COPYRIGHT: (C)1977,JPO&Japio
JP2765076A 1975-12-24 1976-03-16 Semi-conductor device Pending JPS52111378A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2765076A JPS52111378A (en) 1976-03-16 1976-03-16 Semi-conductor device
DE2658304A DE2658304C2 (en) 1975-12-24 1976-12-22 Semiconductor device
NLAANVRAGE7614307,A NL171944C (en) 1975-12-24 1976-12-23 SEMICONDUCTOR DEVICE WITH AN INSULATING SILICON DIOXIDE LAYER APPLIED TO THE SEMICONDUCTOR BODY AND A SILICON CARBIDE PROTECTIVE LAYER.
GB23196/79A GB1572820A (en) 1975-12-24 1976-12-24 Semiconductor device
GB54126/76A GB1572819A (en) 1975-12-24 1976-12-24 Semiconductor device
FR7639087A FR2336795A1 (en) 1975-12-24 1976-12-24 PROTECTIVE FILMS FOR SEMICONDUCTOR DEVICES
US05/915,542 US4224636A (en) 1975-12-24 1978-06-14 Semiconductor device with thermally compensating SiO2 -silicate glass-SiC passivation layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2765076A JPS52111378A (en) 1976-03-16 1976-03-16 Semi-conductor device

Publications (1)

Publication Number Publication Date
JPS52111378A true JPS52111378A (en) 1977-09-19

Family

ID=12226782

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2765076A Pending JPS52111378A (en) 1975-12-24 1976-03-16 Semi-conductor device

Country Status (1)

Country Link
JP (1) JPS52111378A (en)

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