JPS5434767A - Formation method of n-type layer - Google Patents

Formation method of n-type layer

Info

Publication number
JPS5434767A
JPS5434767A JP10045777A JP10045777A JPS5434767A JP S5434767 A JPS5434767 A JP S5434767A JP 10045777 A JP10045777 A JP 10045777A JP 10045777 A JP10045777 A JP 10045777A JP S5434767 A JPS5434767 A JP S5434767A
Authority
JP
Japan
Prior art keywords
type layer
formation method
heavymetal
hfe
getter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10045777A
Other languages
Japanese (ja)
Other versions
JPS6120133B2 (en
Inventor
Akira Muramatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10045777A priority Critical patent/JPS5434767A/en
Publication of JPS5434767A publication Critical patent/JPS5434767A/en
Publication of JPS6120133B2 publication Critical patent/JPS6120133B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To obtain a high-performance element by improving the effect of a heavymetal getter and by preventing hFE and noise characteristics from deteriorating, by forming a N-type layer on the surface of a semiconductor substrate in an atmosphere containing phosphoric compound and chlorine gas using phosphorus dope film as a diffusion source.
COPYRIGHT: (C)1979,JPO&Japio
JP10045777A 1977-08-24 1977-08-24 Formation method of n-type layer Granted JPS5434767A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10045777A JPS5434767A (en) 1977-08-24 1977-08-24 Formation method of n-type layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10045777A JPS5434767A (en) 1977-08-24 1977-08-24 Formation method of n-type layer

Publications (2)

Publication Number Publication Date
JPS5434767A true JPS5434767A (en) 1979-03-14
JPS6120133B2 JPS6120133B2 (en) 1986-05-21

Family

ID=14274435

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10045777A Granted JPS5434767A (en) 1977-08-24 1977-08-24 Formation method of n-type layer

Country Status (1)

Country Link
JP (1) JPS5434767A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57162467A (en) * 1981-03-31 1982-10-06 Toshiba Corp Manufacture of semiconductor device
JPS62160718A (en) * 1986-01-08 1987-07-16 フィリップス　エレクトロニクス　ネムローゼ　フェンノートシャップ Manufacture of semiconductor device by diffusing dopant intosemiconductor substance from oxide of the dopant

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62153833U (en) * 1986-03-24 1987-09-30

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57162467A (en) * 1981-03-31 1982-10-06 Toshiba Corp Manufacture of semiconductor device
JPS62160718A (en) * 1986-01-08 1987-07-16 フィリップス　エレクトロニクス　ネムローゼ　フェンノートシャップ Manufacture of semiconductor device by diffusing dopant intosemiconductor substance from oxide of the dopant

Also Published As

Publication number Publication date
JPS6120133B2 (en) 1986-05-21

Similar Documents

Publication Publication Date Title
JPS5351970A (en) Manufacture for semiconductor substrate
JPS54589A (en) Burying method of insulator
JPS5324277A (en) Semiconductor devic e and its production
JPS5434767A (en) Formation method of n-type layer
JPS5331964A (en) Production of semiconductor substrates
JPS5417682A (en) Semiconductor and its manufacture
JPS5310265A (en) Impurity diffusion method
JPS531471A (en) Manufacture for semiconductor device
JPS546793A (en) Photo detector of semiconductor
JPS538073A (en) Mis type semiconductor device
JPS522180A (en) Method of fabricating mos semiconductor integrated circuit
JPS538082A (en) Production of semiconductor device
JPS547891A (en) Manufacture for planar semiconductor light emission device
JPS51113461A (en) A method for manufacturing semiconductor devices
JPS5244175A (en) Method of flat etching of silicon substrate
JPS5367372A (en) Mos-type field effect transistor
JPS52111378A (en) Semi-conductor device
JPS5259589A (en) Production of semiconductor device
JPS5373990A (en) Semiconductor device
JPS5253678A (en) Semiconductor integrated circuit and productin of the same
JPS5244165A (en) Process for production of semiconductor device
JPS546471A (en) Manufacture of semiconductor device
JPS5384554A (en) Manufacture for semiconductor device
JPS52147969A (en) Manufacture of semiconductor device
JPS53101977A (en) Diffusion method of inpurity to semiconductor substrate