JPS5265664A - Selective introduction of impurity in compound semiconductor substrate - Google Patents

Selective introduction of impurity in compound semiconductor substrate

Info

Publication number
JPS5265664A
JPS5265664A JP14271475A JP14271475A JPS5265664A JP S5265664 A JPS5265664 A JP S5265664A JP 14271475 A JP14271475 A JP 14271475A JP 14271475 A JP14271475 A JP 14271475A JP S5265664 A JPS5265664 A JP S5265664A
Authority
JP
Japan
Prior art keywords
impurity
semiconductor substrate
compound semiconductor
selective introduction
selective
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14271475A
Other languages
Japanese (ja)
Other versions
JPS5751922B2 (en
Inventor
Toshiki Hijikata
Jiyunkou Takagi
Tadaaki Inoue
Koji Tomita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP14271475A priority Critical patent/JPS5265664A/en
Publication of JPS5265664A publication Critical patent/JPS5265664A/en
Publication of JPS5751922B2 publication Critical patent/JPS5751922B2/ja
Granted legal-status Critical Current

Links

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  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To obtain a satisfactory PN junction by selectively convering and treating the surface of the impurity deposition layer on the surface of a semiconductor substrate nad diffusing an impurity under the film.
COPYRIGHT: (C)1977,JPO&Japio
JP14271475A 1975-11-26 1975-11-26 Selective introduction of impurity in compound semiconductor substrate Granted JPS5265664A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14271475A JPS5265664A (en) 1975-11-26 1975-11-26 Selective introduction of impurity in compound semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14271475A JPS5265664A (en) 1975-11-26 1975-11-26 Selective introduction of impurity in compound semiconductor substrate

Publications (2)

Publication Number Publication Date
JPS5265664A true JPS5265664A (en) 1977-05-31
JPS5751922B2 JPS5751922B2 (en) 1982-11-05

Family

ID=15321856

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14271475A Granted JPS5265664A (en) 1975-11-26 1975-11-26 Selective introduction of impurity in compound semiconductor substrate

Country Status (1)

Country Link
JP (1) JPS5265664A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5595322A (en) * 1979-01-12 1980-07-19 Nec Corp Diffusing method of impurity
JPS55105380A (en) * 1979-02-07 1980-08-12 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
US4843033A (en) * 1985-09-27 1989-06-27 Texas Instruments Incorporated Method for outdiffusion of zinc into III-V substrates using zinc tungsten silicide as dopant source

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5595322A (en) * 1979-01-12 1980-07-19 Nec Corp Diffusing method of impurity
JPS55105380A (en) * 1979-02-07 1980-08-12 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
US4843033A (en) * 1985-09-27 1989-06-27 Texas Instruments Incorporated Method for outdiffusion of zinc into III-V substrates using zinc tungsten silicide as dopant source

Also Published As

Publication number Publication date
JPS5751922B2 (en) 1982-11-05

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