JPS5265664A - Selective introduction of impurity in compound semiconductor substrate - Google Patents
Selective introduction of impurity in compound semiconductor substrateInfo
- Publication number
- JPS5265664A JPS5265664A JP14271475A JP14271475A JPS5265664A JP S5265664 A JPS5265664 A JP S5265664A JP 14271475 A JP14271475 A JP 14271475A JP 14271475 A JP14271475 A JP 14271475A JP S5265664 A JPS5265664 A JP S5265664A
- Authority
- JP
- Japan
- Prior art keywords
- impurity
- semiconductor substrate
- compound semiconductor
- selective introduction
- selective
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE: To obtain a satisfactory PN junction by selectively convering and treating the surface of the impurity deposition layer on the surface of a semiconductor substrate nad diffusing an impurity under the film.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14271475A JPS5265664A (en) | 1975-11-26 | 1975-11-26 | Selective introduction of impurity in compound semiconductor substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14271475A JPS5265664A (en) | 1975-11-26 | 1975-11-26 | Selective introduction of impurity in compound semiconductor substrate |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5265664A true JPS5265664A (en) | 1977-05-31 |
JPS5751922B2 JPS5751922B2 (en) | 1982-11-05 |
Family
ID=15321856
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14271475A Granted JPS5265664A (en) | 1975-11-26 | 1975-11-26 | Selective introduction of impurity in compound semiconductor substrate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5265664A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5595322A (en) * | 1979-01-12 | 1980-07-19 | Nec Corp | Diffusing method of impurity |
JPS55105380A (en) * | 1979-02-07 | 1980-08-12 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
US4843033A (en) * | 1985-09-27 | 1989-06-27 | Texas Instruments Incorporated | Method for outdiffusion of zinc into III-V substrates using zinc tungsten silicide as dopant source |
-
1975
- 1975-11-26 JP JP14271475A patent/JPS5265664A/en active Granted
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5595322A (en) * | 1979-01-12 | 1980-07-19 | Nec Corp | Diffusing method of impurity |
JPS55105380A (en) * | 1979-02-07 | 1980-08-12 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
US4843033A (en) * | 1985-09-27 | 1989-06-27 | Texas Instruments Incorporated | Method for outdiffusion of zinc into III-V substrates using zinc tungsten silicide as dopant source |
Also Published As
Publication number | Publication date |
---|---|
JPS5751922B2 (en) | 1982-11-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5244173A (en) | Method of flat etching of silicon substrate | |
JPS5356972A (en) | Mesa type semiconductor device | |
JPS51147981A (en) | Method of manufacturing semiconductor device | |
JPS5265664A (en) | Selective introduction of impurity in compound semiconductor substrate | |
JPS5363993A (en) | Production of semiconductor device | |
JPS51114881A (en) | Semiconductor device manufacturing method | |
JPS5244169A (en) | Process for production of semiconductor device | |
JPS5261960A (en) | Production of semiconductor device | |
JPS5380184A (en) | Manufacture of semiconductor device | |
JPS5244175A (en) | Method of flat etching of silicon substrate | |
JPS5271974A (en) | Production of semiconductor device | |
JPS5244163A (en) | Process for productin of semiconductor element | |
JPS54977A (en) | Manufacture for semiconductor device | |
JPS52131462A (en) | Manufacture of semiconductor device | |
JPS5428566A (en) | Manufacture of semiconductor device | |
JPS5387672A (en) | Semiconductor device | |
JPS522165A (en) | Method of thermally diffusing selectively aluminum of semiconductor su bstrate | |
JPS53101977A (en) | Diffusion method of inpurity to semiconductor substrate | |
JPS538081A (en) | Production of semiconductor device | |
JPS5352388A (en) | Semiconductor device | |
JPS526081A (en) | Semiconductor wafer | |
JPS5249780A (en) | Semiconductor integrated circuit | |
JPS52117560A (en) | Mask formation method | |
JPS51132762A (en) | Heat-treatment method of semiconductor device | |
JPS5360583A (en) | Production of semiconductor device |