JPS5271974A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5271974A
JPS5271974A JP14797575A JP14797575A JPS5271974A JP S5271974 A JPS5271974 A JP S5271974A JP 14797575 A JP14797575 A JP 14797575A JP 14797575 A JP14797575 A JP 14797575A JP S5271974 A JPS5271974 A JP S5271974A
Authority
JP
Japan
Prior art keywords
conductivity type
production
semiconductor device
thin polycrystalline
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14797575A
Other languages
Japanese (ja)
Inventor
Koji Takemae
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP14797575A priority Critical patent/JPS5271974A/en
Publication of JPS5271974A publication Critical patent/JPS5271974A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To economically form a diffusion layer whose depth and layer resistance at the specified positions and other portions vary, by forming a thin polycrystalline semiconductor film of a reverse conductivity type in the specified position on the selectively exposed surface of a semiconductor substrate of - conductivity type and diffusing an impurity from the thin polycrystalline film through heat treatment in a non-oxidizing atmosphere.
COPYRIGHT: (C)1977,JPO&Japio
JP14797575A 1975-12-11 1975-12-11 Production of semiconductor device Pending JPS5271974A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14797575A JPS5271974A (en) 1975-12-11 1975-12-11 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14797575A JPS5271974A (en) 1975-12-11 1975-12-11 Production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5271974A true JPS5271974A (en) 1977-06-15

Family

ID=15442322

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14797575A Pending JPS5271974A (en) 1975-12-11 1975-12-11 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5271974A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5660055A (en) * 1979-10-20 1981-05-23 Nec Home Electronics Ltd Manufacture of semiconductor device
JPS5996768A (en) * 1982-11-24 1984-06-04 Mitsubishi Electric Corp Semiconductor device
JPH0385771A (en) * 1989-08-30 1991-04-10 New Japan Radio Co Ltd Manufacture of buried zener diode

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5660055A (en) * 1979-10-20 1981-05-23 Nec Home Electronics Ltd Manufacture of semiconductor device
JPS5996768A (en) * 1982-11-24 1984-06-04 Mitsubishi Electric Corp Semiconductor device
JPH05872B2 (en) * 1982-11-24 1993-01-06 Mitsubishi Electric Corp
JPH0385771A (en) * 1989-08-30 1991-04-10 New Japan Radio Co Ltd Manufacture of buried zener diode

Similar Documents

Publication Publication Date Title
JPS5271974A (en) Production of semiconductor device
JPS5363993A (en) Production of semiconductor device
JPS5323562A (en) Semiconductor device
JPS5437690A (en) Manufacture for semiconductor device
JPS5444880A (en) Manufacture of semiconductor device
JPS5228879A (en) Semiconductor device and method for its production
JPS5342576A (en) Production of semiconductor device
JPS5339081A (en) Semiconductor device
JPS5261960A (en) Production of semiconductor device
JPS52117063A (en) Preparation of ohmic ontact layer in semiconductor device
JPS52153373A (en) Preparation of semiconductor device
JPS5346272A (en) Impurity diffusion method
JPS52129276A (en) Production of semiconductor device
JPS5380184A (en) Manufacture of semiconductor device
JPS51132965A (en) Semiconductor device process
JPS5271994A (en) Semiconductor integrated circuit device
JPS5317286A (en) Production of semiconductor device
JPS5372482A (en) Manufacture for semiconductor device
JPS5372473A (en) Manufacture of mis type semicondctor device
JPS5390784A (en) Production of semiconductor device
JPS5210673A (en) Manufacturing method of silicon semi-conductor device
JPS5246765A (en) Method of producing semiconductor device
JPS5377168A (en) Production of semiconductor device
JPS53144687A (en) Production of semiconductor device
JPS5251872A (en) Production of semiconductor device