JPS51132965A - Semiconductor device process - Google Patents

Semiconductor device process

Info

Publication number
JPS51132965A
JPS51132965A JP5763975A JP5763975A JPS51132965A JP S51132965 A JPS51132965 A JP S51132965A JP 5763975 A JP5763975 A JP 5763975A JP 5763975 A JP5763975 A JP 5763975A JP S51132965 A JPS51132965 A JP S51132965A
Authority
JP
Japan
Prior art keywords
semiconductor device
device process
substrate
fets
withstanding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5763975A
Other languages
Japanese (ja)
Other versions
JPS5823924B2 (en
Inventor
Kosei Kajiwara
Kazutoshi Nagano
Kuni Ogawa
Tatsunori Nakajima
Kosuke Yasuno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP50057639A priority Critical patent/JPS5823924B2/en
Publication of JPS51132965A publication Critical patent/JPS51132965A/en
Publication of JPS5823924B2 publication Critical patent/JPS5823924B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To reduce the diffusion time by diffusing impurities in porous material layer formed on a high resistance substrate and obtain a substrate for high voltage-withstanding FETs.
COPYRIGHT: (C)1976,JPO&Japio
JP50057639A 1975-05-14 1975-05-14 hand tai souchi no seizou houhou Expired JPS5823924B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50057639A JPS5823924B2 (en) 1975-05-14 1975-05-14 hand tai souchi no seizou houhou

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50057639A JPS5823924B2 (en) 1975-05-14 1975-05-14 hand tai souchi no seizou houhou

Publications (2)

Publication Number Publication Date
JPS51132965A true JPS51132965A (en) 1976-11-18
JPS5823924B2 JPS5823924B2 (en) 1983-05-18

Family

ID=13061449

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50057639A Expired JPS5823924B2 (en) 1975-05-14 1975-05-14 hand tai souchi no seizou houhou

Country Status (1)

Country Link
JP (1) JPS5823924B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008205398A (en) * 2007-02-22 2008-09-04 Sharp Corp Photoelectric conversion device and its manufacturing method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4919030A (en) * 1972-04-15 1974-02-20
JPS5177066A (en) * 1974-12-27 1976-07-03 New Nippon Electric Co HANDOTAISOCHINOSEIZOHOHO

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4919030A (en) * 1972-04-15 1974-02-20
JPS5177066A (en) * 1974-12-27 1976-07-03 New Nippon Electric Co HANDOTAISOCHINOSEIZOHOHO

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008205398A (en) * 2007-02-22 2008-09-04 Sharp Corp Photoelectric conversion device and its manufacturing method

Also Published As

Publication number Publication date
JPS5823924B2 (en) 1983-05-18

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