JPS5253659A - Production of semiconductor element - Google Patents
Production of semiconductor elementInfo
- Publication number
- JPS5253659A JPS5253659A JP12970975A JP12970975A JPS5253659A JP S5253659 A JPS5253659 A JP S5253659A JP 12970975 A JP12970975 A JP 12970975A JP 12970975 A JP12970975 A JP 12970975A JP S5253659 A JPS5253659 A JP S5253659A
- Authority
- JP
- Japan
- Prior art keywords
- production
- semiconductor element
- time
- diffusion
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To obtain varying sheet resistance layers within the same substrate by controlling the thickness of diffusion masks and diffusion time at the time of adding only the required quantity of a specific impurity into a semiconductor material.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12970975A JPS608623B2 (en) | 1975-10-28 | 1975-10-28 | Method for manufacturing semiconductor devices |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12970975A JPS608623B2 (en) | 1975-10-28 | 1975-10-28 | Method for manufacturing semiconductor devices |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5253659A true JPS5253659A (en) | 1977-04-30 |
JPS608623B2 JPS608623B2 (en) | 1985-03-04 |
Family
ID=15016252
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12970975A Expired JPS608623B2 (en) | 1975-10-28 | 1975-10-28 | Method for manufacturing semiconductor devices |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS608623B2 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS537635A (en) * | 1976-05-11 | 1978-01-24 | Rhone Poulenc Ind | One stage production of telephthalic acid from dipotasium telephthalate |
JPS58201367A (en) * | 1982-05-20 | 1983-11-24 | Nec Corp | Manufacture of mos type semiconductor device |
JPS58201366A (en) * | 1982-05-20 | 1983-11-24 | Nec Corp | Manufacture of mos type semiconductor device |
JPS58201365A (en) * | 1982-05-20 | 1983-11-24 | Nec Corp | Manufacture of mos type semiconductor device |
-
1975
- 1975-10-28 JP JP12970975A patent/JPS608623B2/en not_active Expired
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS537635A (en) * | 1976-05-11 | 1978-01-24 | Rhone Poulenc Ind | One stage production of telephthalic acid from dipotasium telephthalate |
JPS5610901B2 (en) * | 1976-05-11 | 1981-03-11 | ||
JPS58201367A (en) * | 1982-05-20 | 1983-11-24 | Nec Corp | Manufacture of mos type semiconductor device |
JPS58201366A (en) * | 1982-05-20 | 1983-11-24 | Nec Corp | Manufacture of mos type semiconductor device |
JPS58201365A (en) * | 1982-05-20 | 1983-11-24 | Nec Corp | Manufacture of mos type semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS608623B2 (en) | 1985-03-04 |
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