JPS5253659A - Production of semiconductor element - Google Patents

Production of semiconductor element

Info

Publication number
JPS5253659A
JPS5253659A JP12970975A JP12970975A JPS5253659A JP S5253659 A JPS5253659 A JP S5253659A JP 12970975 A JP12970975 A JP 12970975A JP 12970975 A JP12970975 A JP 12970975A JP S5253659 A JPS5253659 A JP S5253659A
Authority
JP
Japan
Prior art keywords
production
semiconductor element
time
diffusion
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12970975A
Other languages
Japanese (ja)
Other versions
JPS608623B2 (en
Inventor
Haruo Nakayama
Akihiro Shindo
Yuichi Ishikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP12970975A priority Critical patent/JPS608623B2/en
Publication of JPS5253659A publication Critical patent/JPS5253659A/en
Publication of JPS608623B2 publication Critical patent/JPS608623B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To obtain varying sheet resistance layers within the same substrate by controlling the thickness of diffusion masks and diffusion time at the time of adding only the required quantity of a specific impurity into a semiconductor material.
COPYRIGHT: (C)1977,JPO&Japio
JP12970975A 1975-10-28 1975-10-28 Method for manufacturing semiconductor devices Expired JPS608623B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12970975A JPS608623B2 (en) 1975-10-28 1975-10-28 Method for manufacturing semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12970975A JPS608623B2 (en) 1975-10-28 1975-10-28 Method for manufacturing semiconductor devices

Publications (2)

Publication Number Publication Date
JPS5253659A true JPS5253659A (en) 1977-04-30
JPS608623B2 JPS608623B2 (en) 1985-03-04

Family

ID=15016252

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12970975A Expired JPS608623B2 (en) 1975-10-28 1975-10-28 Method for manufacturing semiconductor devices

Country Status (1)

Country Link
JP (1) JPS608623B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS537635A (en) * 1976-05-11 1978-01-24 Rhone Poulenc Ind One stage production of telephthalic acid from dipotasium telephthalate
JPS58201367A (en) * 1982-05-20 1983-11-24 Nec Corp Manufacture of mos type semiconductor device
JPS58201366A (en) * 1982-05-20 1983-11-24 Nec Corp Manufacture of mos type semiconductor device
JPS58201365A (en) * 1982-05-20 1983-11-24 Nec Corp Manufacture of mos type semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS537635A (en) * 1976-05-11 1978-01-24 Rhone Poulenc Ind One stage production of telephthalic acid from dipotasium telephthalate
JPS5610901B2 (en) * 1976-05-11 1981-03-11
JPS58201367A (en) * 1982-05-20 1983-11-24 Nec Corp Manufacture of mos type semiconductor device
JPS58201366A (en) * 1982-05-20 1983-11-24 Nec Corp Manufacture of mos type semiconductor device
JPS58201365A (en) * 1982-05-20 1983-11-24 Nec Corp Manufacture of mos type semiconductor device

Also Published As

Publication number Publication date
JPS608623B2 (en) 1985-03-04

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