JPS5263673A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS5263673A JPS5263673A JP13997475A JP13997475A JPS5263673A JP S5263673 A JPS5263673 A JP S5263673A JP 13997475 A JP13997475 A JP 13997475A JP 13997475 A JP13997475 A JP 13997475A JP S5263673 A JPS5263673 A JP S5263673A
- Authority
- JP
- Japan
- Prior art keywords
- production
- semiconductor device
- substrate
- annealing
- produce
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To produce an electrode material of low resistance by forming a polysilicon film on a substrate, then annealing the substrate at a temperature higher than the growth temperature.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13997475A JPS5263673A (en) | 1975-11-20 | 1975-11-20 | Production of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13997475A JPS5263673A (en) | 1975-11-20 | 1975-11-20 | Production of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5263673A true JPS5263673A (en) | 1977-05-26 |
Family
ID=15257991
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13997475A Pending JPS5263673A (en) | 1975-11-20 | 1975-11-20 | Production of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5263673A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4755482A (en) * | 1986-02-19 | 1988-07-05 | Kabushiki Kaisha Toshiba | Making semiconductor device on insulating substrate by forming conductive layers on both major surfaces |
-
1975
- 1975-11-20 JP JP13997475A patent/JPS5263673A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4755482A (en) * | 1986-02-19 | 1988-07-05 | Kabushiki Kaisha Toshiba | Making semiconductor device on insulating substrate by forming conductive layers on both major surfaces |
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