JPS5263673A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5263673A
JPS5263673A JP13997475A JP13997475A JPS5263673A JP S5263673 A JPS5263673 A JP S5263673A JP 13997475 A JP13997475 A JP 13997475A JP 13997475 A JP13997475 A JP 13997475A JP S5263673 A JPS5263673 A JP S5263673A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
substrate
annealing
produce
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13997475A
Other languages
Japanese (ja)
Inventor
Hitoshi Hasegawa
Kunihiko Wada
Takashi Matsumoto
Shigeru Yamaoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP13997475A priority Critical patent/JPS5263673A/en
Publication of JPS5263673A publication Critical patent/JPS5263673A/en
Pending legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To produce an electrode material of low resistance by forming a polysilicon film on a substrate, then annealing the substrate at a temperature higher than the growth temperature.
COPYRIGHT: (C)1977,JPO&Japio
JP13997475A 1975-11-20 1975-11-20 Production of semiconductor device Pending JPS5263673A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13997475A JPS5263673A (en) 1975-11-20 1975-11-20 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13997475A JPS5263673A (en) 1975-11-20 1975-11-20 Production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5263673A true JPS5263673A (en) 1977-05-26

Family

ID=15257991

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13997475A Pending JPS5263673A (en) 1975-11-20 1975-11-20 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5263673A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4755482A (en) * 1986-02-19 1988-07-05 Kabushiki Kaisha Toshiba Making semiconductor device on insulating substrate by forming conductive layers on both major surfaces

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4755482A (en) * 1986-02-19 1988-07-05 Kabushiki Kaisha Toshiba Making semiconductor device on insulating substrate by forming conductive layers on both major surfaces

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