JPS5230392A - Electrode and it's manufacturing process - Google Patents

Electrode and it's manufacturing process

Info

Publication number
JPS5230392A
JPS5230392A JP50106005A JP10600575A JPS5230392A JP S5230392 A JPS5230392 A JP S5230392A JP 50106005 A JP50106005 A JP 50106005A JP 10600575 A JP10600575 A JP 10600575A JP S5230392 A JPS5230392 A JP S5230392A
Authority
JP
Japan
Prior art keywords
thin film
low
electrode
manufacturing process
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50106005A
Other languages
Japanese (ja)
Other versions
JPS5339318B2 (en
Inventor
Takao Miyazaki
Hiroshi Tamura
Nobuo Nakamura
Mitsunori Ketsusako
Eiichi Maruyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP50106005A priority Critical patent/JPS5230392A/en
Publication of JPS5230392A publication Critical patent/JPS5230392A/en
Publication of JPS5339318B2 publication Critical patent/JPS5339318B2/ja
Granted legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells

Abstract

PURPOSE: Obtain a substrate for forming thin film for low-cost silicon thin film solar batteries forming low-resistance titanium nitride thin film on a low-cost insulation substrate.
COPYRIGHT: (C)1977,JPO&Japio
JP50106005A 1975-09-03 1975-09-03 Electrode and it's manufacturing process Granted JPS5230392A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50106005A JPS5230392A (en) 1975-09-03 1975-09-03 Electrode and it's manufacturing process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50106005A JPS5230392A (en) 1975-09-03 1975-09-03 Electrode and it's manufacturing process

Publications (2)

Publication Number Publication Date
JPS5230392A true JPS5230392A (en) 1977-03-08
JPS5339318B2 JPS5339318B2 (en) 1978-10-20

Family

ID=14422557

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50106005A Granted JPS5230392A (en) 1975-09-03 1975-09-03 Electrode and it's manufacturing process

Country Status (1)

Country Link
JP (1) JPS5230392A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4605947A (en) * 1983-03-07 1986-08-12 Motorola Inc. Titanium nitride MOS device gate electrode and method of producing
JPS63174319A (en) * 1987-01-14 1988-07-18 Hitachi Ltd Manufacture of semiconductor device
JPH098139A (en) * 1996-08-02 1997-01-10 Hitachi Ltd Semiconductor device and its manufacture
JPH0917749A (en) * 1996-08-02 1997-01-17 Hitachi Ltd Thin-film formation apparatus

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4605947A (en) * 1983-03-07 1986-08-12 Motorola Inc. Titanium nitride MOS device gate electrode and method of producing
JPS63174319A (en) * 1987-01-14 1988-07-18 Hitachi Ltd Manufacture of semiconductor device
JPH098139A (en) * 1996-08-02 1997-01-10 Hitachi Ltd Semiconductor device and its manufacture
JPH0917749A (en) * 1996-08-02 1997-01-17 Hitachi Ltd Thin-film formation apparatus

Also Published As

Publication number Publication date
JPS5339318B2 (en) 1978-10-20

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