JPS5247685A - Process for production of mos type semiconductor device - Google Patents

Process for production of mos type semiconductor device

Info

Publication number
JPS5247685A
JPS5247685A JP12408775A JP12408775A JPS5247685A JP S5247685 A JPS5247685 A JP S5247685A JP 12408775 A JP12408775 A JP 12408775A JP 12408775 A JP12408775 A JP 12408775A JP S5247685 A JPS5247685 A JP S5247685A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
type semiconductor
mos type
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12408775A
Other languages
Japanese (ja)
Other versions
JPS60785B2 (en
Inventor
Hiroshi Kuroda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP50124087A priority Critical patent/JPS60785B2/en
Publication of JPS5247685A publication Critical patent/JPS5247685A/en
Publication of JPS60785B2 publication Critical patent/JPS60785B2/en
Expired legal-status Critical Current

Links

Abstract

PURPOSE: To beforehand form overhangs by etching a polycrystalline Si film with an Al film as a mask, thereby achieving flattening of the surface and preventing the disconnection and leakage of wiring electrodes.
COPYRIGHT: (C)1977,JPO&Japio
JP50124087A 1975-10-14 1975-10-14 Manufacturing method of MOS type semiconductor device Expired JPS60785B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50124087A JPS60785B2 (en) 1975-10-14 1975-10-14 Manufacturing method of MOS type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50124087A JPS60785B2 (en) 1975-10-14 1975-10-14 Manufacturing method of MOS type semiconductor device

Publications (2)

Publication Number Publication Date
JPS5247685A true JPS5247685A (en) 1977-04-15
JPS60785B2 JPS60785B2 (en) 1985-01-10

Family

ID=14876593

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50124087A Expired JPS60785B2 (en) 1975-10-14 1975-10-14 Manufacturing method of MOS type semiconductor device

Country Status (1)

Country Link
JP (1) JPS60785B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5668028A (en) * 1993-11-30 1997-09-16 Sgs-Thomson Microelectronics, Inc. Method of depositing thin nitride layer on gate oxide dielectric

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63247957A (en) * 1986-11-20 1988-10-14 Matsushita Electric Ind Co Ltd Device for reducing flaw on shutter

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49110276A (en) * 1973-02-21 1974-10-21

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49110276A (en) * 1973-02-21 1974-10-21

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5668028A (en) * 1993-11-30 1997-09-16 Sgs-Thomson Microelectronics, Inc. Method of depositing thin nitride layer on gate oxide dielectric
US5710453A (en) * 1993-11-30 1998-01-20 Sgs-Thomson Microelectronics, Inc. Transistor structure and method for making same

Also Published As

Publication number Publication date
JPS60785B2 (en) 1985-01-10

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