JPS5247685A - Process for production of mos type semiconductor device - Google Patents
Process for production of mos type semiconductor deviceInfo
- Publication number
- JPS5247685A JPS5247685A JP12408775A JP12408775A JPS5247685A JP S5247685 A JPS5247685 A JP S5247685A JP 12408775 A JP12408775 A JP 12408775A JP 12408775 A JP12408775 A JP 12408775A JP S5247685 A JPS5247685 A JP S5247685A
- Authority
- JP
- Japan
- Prior art keywords
- production
- semiconductor device
- type semiconductor
- mos type
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To beforehand form overhangs by etching a polycrystalline Si film with an Al film as a mask, thereby achieving flattening of the surface and preventing the disconnection and leakage of wiring electrodes.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50124087A JPS60785B2 (en) | 1975-10-14 | 1975-10-14 | Manufacturing method of MOS type semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50124087A JPS60785B2 (en) | 1975-10-14 | 1975-10-14 | Manufacturing method of MOS type semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5247685A true JPS5247685A (en) | 1977-04-15 |
JPS60785B2 JPS60785B2 (en) | 1985-01-10 |
Family
ID=14876593
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50124087A Expired JPS60785B2 (en) | 1975-10-14 | 1975-10-14 | Manufacturing method of MOS type semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60785B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5668028A (en) * | 1993-11-30 | 1997-09-16 | Sgs-Thomson Microelectronics, Inc. | Method of depositing thin nitride layer on gate oxide dielectric |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63247957A (en) * | 1986-11-20 | 1988-10-14 | Matsushita Electric Ind Co Ltd | Device for reducing flaw on shutter |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS49110276A (en) * | 1973-02-21 | 1974-10-21 |
-
1975
- 1975-10-14 JP JP50124087A patent/JPS60785B2/en not_active Expired
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS49110276A (en) * | 1973-02-21 | 1974-10-21 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5668028A (en) * | 1993-11-30 | 1997-09-16 | Sgs-Thomson Microelectronics, Inc. | Method of depositing thin nitride layer on gate oxide dielectric |
US5710453A (en) * | 1993-11-30 | 1998-01-20 | Sgs-Thomson Microelectronics, Inc. | Transistor structure and method for making same |
Also Published As
Publication number | Publication date |
---|---|
JPS60785B2 (en) | 1985-01-10 |
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