JPS5261475A - Production of silicon crystal film - Google Patents

Production of silicon crystal film

Info

Publication number
JPS5261475A
JPS5261475A JP13718875A JP13718875A JPS5261475A JP S5261475 A JPS5261475 A JP S5261475A JP 13718875 A JP13718875 A JP 13718875A JP 13718875 A JP13718875 A JP 13718875A JP S5261475 A JPS5261475 A JP S5261475A
Authority
JP
Japan
Prior art keywords
production
crystal film
silicon crystal
film
sicbc
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13718875A
Other languages
Japanese (ja)
Inventor
Tadashi Saito
Shigekazu Minagawa
Takashi Tokuyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP13718875A priority Critical patent/JPS5261475A/en
Publication of JPS5261475A publication Critical patent/JPS5261475A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To form a uniform film of large aprticle sizes by depositing a film containing more than one of C, B, SiCBC, AlC on a substrate and recrsytalizing said film.
COPYRIGHT: (C)1977,JPO&Japio
JP13718875A 1975-11-17 1975-11-17 Production of silicon crystal film Pending JPS5261475A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13718875A JPS5261475A (en) 1975-11-17 1975-11-17 Production of silicon crystal film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13718875A JPS5261475A (en) 1975-11-17 1975-11-17 Production of silicon crystal film

Publications (1)

Publication Number Publication Date
JPS5261475A true JPS5261475A (en) 1977-05-20

Family

ID=15192847

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13718875A Pending JPS5261475A (en) 1975-11-17 1975-11-17 Production of silicon crystal film

Country Status (1)

Country Link
JP (1) JPS5261475A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120193640A1 (en) * 2011-01-28 2012-08-02 Seoul Opto Device Co., Ltd. Crystalline aluminum carbide thin film, semiconductor substrate having the aluminum carbide thin film formed thereon and method of fabricating the same
WO2012111884A1 (en) * 2011-02-16 2012-08-23 Seoul Opto Device Co., Ltd. Laminate substrate and method of fabricating the same
KR20170036071A (en) 2014-08-28 2017-03-31 미쓰비시덴키 가부시키가이샤 Semiconductor device manufacturing method and semiconductor device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120193640A1 (en) * 2011-01-28 2012-08-02 Seoul Opto Device Co., Ltd. Crystalline aluminum carbide thin film, semiconductor substrate having the aluminum carbide thin film formed thereon and method of fabricating the same
US8624291B2 (en) * 2011-01-28 2014-01-07 Seoul Opto Device Co., Ltd. Crystalline aluminum carbide thin film, semiconductor substrate having the aluminum carbide thin film formed thereon and method of fabricating the same
US8697551B2 (en) 2011-01-28 2014-04-15 Seoul Opto Device Co., Ltd. Crystalline aluminum carbide thin film, semiconductor substrate having the aluminum carbide thin film formed thereon and method of fabricating the same
WO2012111884A1 (en) * 2011-02-16 2012-08-23 Seoul Opto Device Co., Ltd. Laminate substrate and method of fabricating the same
KR20120094406A (en) * 2011-02-16 2012-08-24 서울옵토디바이스주식회사 Substrate having stacked layers and method of fabricating the same
US8957426B2 (en) 2011-02-16 2015-02-17 Seoul Viosys Co., Ltd. Laminate substrate and method of fabricating the same
KR20170036071A (en) 2014-08-28 2017-03-31 미쓰비시덴키 가부시키가이샤 Semiconductor device manufacturing method and semiconductor device

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