JPS5444880A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5444880A JPS5444880A JP11206277A JP11206277A JPS5444880A JP S5444880 A JPS5444880 A JP S5444880A JP 11206277 A JP11206277 A JP 11206277A JP 11206277 A JP11206277 A JP 11206277A JP S5444880 A JPS5444880 A JP S5444880A
- Authority
- JP
- Japan
- Prior art keywords
- film
- polycrystal
- resistor
- atmosphere
- resistance value
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE: To obtain a resistor with a desired resistance value utilizing that after conductivity is given by injecting impurity ions into a polycrystal Si film, the resistance value increase through the heating in an atmosphere containing H2, etc., and decreases through the heating in an atmosphere containing no H2.
CONSTITUTION: Onto Si substrate 1, SiO2 film 2 is adhered and on it, polycrystal Si film 3 is stacked, and then, the substrate is heat-treated in an O2 atmosphere in order to make excellent the adhesion of the photo resist film on film 3, thereby converting the only surface layer of film 3 into SiO2 film 4. Next, pattern 5 of the photo resist film is provided and films 4 and 3 are etched and removed selectively to make resistor 3' of Si polycrystal 3 remain; and P type ions are injected via film 4 so that the density peak will be in the center of the thickness of resistor 3'. Afterward, a heat treatment in an N2 atmosphere at 700 to 1,000°C makes it active to obtain a high resistance, and then, a heat treatment at 400 to 1,000°C in a gas of H2 or H2 and N2 decreases the resistance value down to a desired value.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11206277A JPS5444880A (en) | 1977-09-16 | 1977-09-16 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11206277A JPS5444880A (en) | 1977-09-16 | 1977-09-16 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5444880A true JPS5444880A (en) | 1979-04-09 |
Family
ID=14577082
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11206277A Pending JPS5444880A (en) | 1977-09-16 | 1977-09-16 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5444880A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6074466A (en) * | 1983-06-17 | 1985-04-26 | テキサス インスツルメンツ インコ−ポレイテツド | Method of producing polysilicon resistance element |
| JPS61220452A (en) * | 1985-03-27 | 1986-09-30 | Nec Corp | Manufacture of semiconductor device |
| JPH01231362A (en) * | 1988-03-11 | 1989-09-14 | Sony Corp | Manufacture of polycrystal silicon resistance |
| WO1991010262A1 (en) * | 1989-12-26 | 1991-07-11 | Sony Corporation | Method of manufacturing semiconductor device |
| JPH0718791A (en) * | 1993-06-30 | 1995-01-20 | Akinobu Sawara | Roof tile made of synthetic resin |
-
1977
- 1977-09-16 JP JP11206277A patent/JPS5444880A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6074466A (en) * | 1983-06-17 | 1985-04-26 | テキサス インスツルメンツ インコ−ポレイテツド | Method of producing polysilicon resistance element |
| JPH0587986B2 (en) * | 1983-06-17 | 1993-12-20 | Texas Instruments Inc | |
| JPS61220452A (en) * | 1985-03-27 | 1986-09-30 | Nec Corp | Manufacture of semiconductor device |
| JPH0556661B2 (en) * | 1985-03-27 | 1993-08-20 | Nippon Electric Co | |
| JPH01231362A (en) * | 1988-03-11 | 1989-09-14 | Sony Corp | Manufacture of polycrystal silicon resistance |
| WO1991010262A1 (en) * | 1989-12-26 | 1991-07-11 | Sony Corporation | Method of manufacturing semiconductor device |
| US5356825A (en) * | 1989-12-26 | 1994-10-18 | Sony Corporation | Method of manufacturing semiconductor devices |
| JPH0718791A (en) * | 1993-06-30 | 1995-01-20 | Akinobu Sawara | Roof tile made of synthetic resin |
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