JPS54103672A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS54103672A JPS54103672A JP1094778A JP1094778A JPS54103672A JP S54103672 A JPS54103672 A JP S54103672A JP 1094778 A JP1094778 A JP 1094778A JP 1094778 A JP1094778 A JP 1094778A JP S54103672 A JPS54103672 A JP S54103672A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- film
- substrate
- diffused layer
- diffused
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE: To achieve longer wiring life and less surface undulations by containing an impurity of a rate of diffusion higher than that of the impurity in the diffused layer of a substrate in glass film and creating metal electrodes in the shallow diffused layer.
CONSTITUTION: With the oxide thick film 2 on a p type semiconductor substrate 1 as a mask, an As diffused layer 3 is formed, after which holes are opened in the thermal oxide film on the surface. Poly-Si wiring layers 4 are beforehand provided on the thick film 2. The entire surface is covered with PSG 5. P is larger in the coefficient of diffusion than As and therefore if the substrate is treated for about 1 hour in N2, a P diffused layer 6 becomes about 2μm becoming sufficient to be able to prevent alloy spike. In addition, if the distance between the opening of the film 2 and the circumferential edge of the layer 3 is taken sufficiently long, the effect of the layer 6 does not extend to the periphery of the layer 3. The layer 5 flows to ease the serrations of the layer 4, thereby preventing disconnection. Openings are selectively made in the PSG and metal wirings layer 7 are provided. When ohmic contact is created by heat treatment, the device is completed.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1094778A JPS54103672A (en) | 1978-02-01 | 1978-02-01 | Production of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1094778A JPS54103672A (en) | 1978-02-01 | 1978-02-01 | Production of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS54103672A true JPS54103672A (en) | 1979-08-15 |
Family
ID=11764388
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1094778A Pending JPS54103672A (en) | 1978-02-01 | 1978-02-01 | Production of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54103672A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6221279A (en) * | 1985-07-19 | 1987-01-29 | Sanyo Electric Co Ltd | Zener diode |
| JPH0474417A (en) * | 1990-07-16 | 1992-03-09 | Matsushita Electron Corp | Manufacture of semiconductor device |
| EP0609658A2 (en) * | 1993-01-12 | 1994-08-10 | Sony Corporation | Output circuit device for charge transfer element |
-
1978
- 1978-02-01 JP JP1094778A patent/JPS54103672A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6221279A (en) * | 1985-07-19 | 1987-01-29 | Sanyo Electric Co Ltd | Zener diode |
| JPH0474417A (en) * | 1990-07-16 | 1992-03-09 | Matsushita Electron Corp | Manufacture of semiconductor device |
| EP0609658A2 (en) * | 1993-01-12 | 1994-08-10 | Sony Corporation | Output circuit device for charge transfer element |
| EP0609658A3 (en) * | 1993-01-12 | 1994-11-09 | Sony Corp | Output circuit device for charge transfer element. |
| US5432364A (en) * | 1993-01-12 | 1995-07-11 | Sony Corporation | Output circuit device for charge transfer element |
| US5498887A (en) * | 1993-01-12 | 1996-03-12 | Sony Corporation | Output circuit device for a charge transfer element having tripartite diffusion layer |
| US5569616A (en) * | 1993-01-12 | 1996-10-29 | Sony Corporation | Process for forming an output circuit device for a charge transfer element having tripartite diffusion layer |
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