JPS5638863A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5638863A
JPS5638863A JP11502479A JP11502479A JPS5638863A JP S5638863 A JPS5638863 A JP S5638863A JP 11502479 A JP11502479 A JP 11502479A JP 11502479 A JP11502479 A JP 11502479A JP S5638863 A JPS5638863 A JP S5638863A
Authority
JP
Japan
Prior art keywords
film
window
silicide layer
connecting window
metal silicide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11502479A
Other languages
Japanese (ja)
Inventor
Shigeru Ozora
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP11502479A priority Critical patent/JPS5638863A/en
Publication of JPS5638863A publication Critical patent/JPS5638863A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To remove adverse effect which would appear in an unstable silicide layer at the peripheral portion of the connecting window by forming a metal silicide layer in the connecting window in an insulating film covering the surface of a semiconductor substrate, thereafter sequentially providing an insulating film having a window which is smaller than said window and a contact electrode. CONSTITUTION:The first oxide film 23 having a connecting window is provided on a P type semiconductor substrate 21 on which an N type diffused layer 22 is formed. Then, a metal silicide layer 25 is formed by depositing platinum and the like and performing the heat treatment. Then, the second oxide film (protecting film) 24 having a connecting window which is smaller than the connecting window in the film 23 is provided, and an electrode metal 26 is provided on the film 24 so as to contact the metal silicide layer 25. Since an unstable metal silicide layer 29 which is generated at the periphery of the connecting window is covered by the film 24, the adverse effects are not caused by the electrode metal 26.
JP11502479A 1979-09-07 1979-09-07 Semiconductor device Pending JPS5638863A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11502479A JPS5638863A (en) 1979-09-07 1979-09-07 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11502479A JPS5638863A (en) 1979-09-07 1979-09-07 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5638863A true JPS5638863A (en) 1981-04-14

Family

ID=14652335

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11502479A Pending JPS5638863A (en) 1979-09-07 1979-09-07 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5638863A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61160972A (en) * 1985-01-08 1986-07-21 Nippon Gakki Seizo Kk Manufacture of semiconductor device
JPH01319974A (en) * 1988-06-20 1989-12-26 Nec Corp Semiconductor device
JPH0411776A (en) * 1990-04-16 1992-01-16 Natl Sci Council Semiconductor device provided with ptsi/si structure and fluorine ion implantation thereof
DE10344749B3 (en) * 2003-09-25 2005-01-20 Infineon Technologies Ag Schottky contact used in the production of electronic components comprises an insulating protective layer arranged on an insulating layer and in a protective region lying next to a metal-semiconductor transition

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61160972A (en) * 1985-01-08 1986-07-21 Nippon Gakki Seizo Kk Manufacture of semiconductor device
JPH01319974A (en) * 1988-06-20 1989-12-26 Nec Corp Semiconductor device
JPH0411776A (en) * 1990-04-16 1992-01-16 Natl Sci Council Semiconductor device provided with ptsi/si structure and fluorine ion implantation thereof
DE10344749B3 (en) * 2003-09-25 2005-01-20 Infineon Technologies Ag Schottky contact used in the production of electronic components comprises an insulating protective layer arranged on an insulating layer and in a protective region lying next to a metal-semiconductor transition

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