JPS55110059A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS55110059A
JPS55110059A JP1739979A JP1739979A JPS55110059A JP S55110059 A JPS55110059 A JP S55110059A JP 1739979 A JP1739979 A JP 1739979A JP 1739979 A JP1739979 A JP 1739979A JP S55110059 A JPS55110059 A JP S55110059A
Authority
JP
Japan
Prior art keywords
layer
film
cut
substrate
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1739979A
Other languages
Japanese (ja)
Other versions
JPS6115583B2 (en
Inventor
Yoshihisa Kawamoto
Toshio Kawasaki
Mami Yokozawa
Kenichi Tateno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP1739979A priority Critical patent/JPS55110059A/en
Publication of JPS55110059A publication Critical patent/JPS55110059A/en
Publication of JPS6115583B2 publication Critical patent/JPS6115583B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: To prevent a wire cut at the stepped part by plasticizing the surface after a metal layer is formed on a semiconductor substrate.
CONSTITUTION: The desired diffusion layer 2 is formed on the Si substrate, and by opening SiO2 film 4, Al layers 3, 5 are evaporated. Al layers 3, 5 are plasticized by rubbing their surfaces with brush 7, and film-cut part 6, which has been produced in the stepped part is buried with an extended overturn of Al layer. Subsequently, by operating photo-etching, the electrode part of Al layer is left, and this is processed in N2 at 500°C for 30min. By this heat treatment, Al layer is alloyed with the Si substrate and a good ohmic contact is formed, and at the same time, the turned part of Al layer, which has filled the film-cut part monolithicaly, is integrated with Al layer on both sides, and a complete electrode without a film-cut is formed.
COPYRIGHT: (C)1980,JPO&Japio
JP1739979A 1979-02-16 1979-02-16 Manufacture of semiconductor device Granted JPS55110059A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1739979A JPS55110059A (en) 1979-02-16 1979-02-16 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1739979A JPS55110059A (en) 1979-02-16 1979-02-16 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS55110059A true JPS55110059A (en) 1980-08-25
JPS6115583B2 JPS6115583B2 (en) 1986-04-24

Family

ID=11942909

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1739979A Granted JPS55110059A (en) 1979-02-16 1979-02-16 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS55110059A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02114312A (en) * 1988-10-24 1990-04-26 Yokogawa Electric Corp Optical detector

Also Published As

Publication number Publication date
JPS6115583B2 (en) 1986-04-24

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