JPS5524468A - Manufacture of semiconductor - Google Patents

Manufacture of semiconductor

Info

Publication number
JPS5524468A
JPS5524468A JP9727678A JP9727678A JPS5524468A JP S5524468 A JPS5524468 A JP S5524468A JP 9727678 A JP9727678 A JP 9727678A JP 9727678 A JP9727678 A JP 9727678A JP S5524468 A JPS5524468 A JP S5524468A
Authority
JP
Japan
Prior art keywords
layer
substrate
type
range
laser beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9727678A
Other languages
Japanese (ja)
Inventor
Hachimichi Oomura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP9727678A priority Critical patent/JPS5524468A/en
Publication of JPS5524468A publication Critical patent/JPS5524468A/en
Pending legal-status Critical Current

Links

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To partially change semiconductor or metallic layer into insulating layer through the process consisting of injecting the ions of an element which produces insulating material by combining with the component element of said material layer and applying laser beam on said material layer so that the contamination of said insulating layer can be prevented while the heating of said material layer is avoided.
CONSTITUTION: N-type layer 2 is epitaxially formed on N+-type Si substrate 1, said substrate 1 is covered with SiO2 film 3, and polycrystalline Si layer 4 is deposited thereon. Next, nitrogen ions N+ are injected into said layer 4 with injection energy and dose fixed at 30W40KV and 3×1017/cm2 respectively. Thereafter, said layer 4 is changed into Si3N4 layer 4' by applying on N+-ion injection range Nd-YAG laser beam whose application energy density is fixed at 1W5J/cm2. Next, thick field SiO2 films 5 extending up to said substrate 1 are formed at the both ends of the layer 2 through the etching removal of the other portions than said layer 4', of said film 4 and the heat-treatment of said substrate 1, an opening is provided by removing said layer 4' and P-type base range 6 and N-type emitter range 7 are diffusedly formed in said layer 2 and in said base range 6 respectively.
COPYRIGHT: (C)1980,JPO&Japio
JP9727678A 1978-08-11 1978-08-11 Manufacture of semiconductor Pending JPS5524468A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9727678A JPS5524468A (en) 1978-08-11 1978-08-11 Manufacture of semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9727678A JPS5524468A (en) 1978-08-11 1978-08-11 Manufacture of semiconductor

Publications (1)

Publication Number Publication Date
JPS5524468A true JPS5524468A (en) 1980-02-21

Family

ID=14187991

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9727678A Pending JPS5524468A (en) 1978-08-11 1978-08-11 Manufacture of semiconductor

Country Status (1)

Country Link
JP (1) JPS5524468A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55150236A (en) * 1979-05-11 1980-11-22 Mitsubishi Electric Corp Method of forming oxide film
JPS55162235A (en) * 1979-06-01 1980-12-17 Mitsubishi Electric Corp Forming nitride film
US4774197A (en) * 1986-06-17 1988-09-27 Advanced Micro Devices, Inc. Method of improving silicon dioxide

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55150236A (en) * 1979-05-11 1980-11-22 Mitsubishi Electric Corp Method of forming oxide film
JPS6232616B2 (en) * 1979-05-11 1987-07-15 Mitsubishi Electric Corp
JPS55162235A (en) * 1979-06-01 1980-12-17 Mitsubishi Electric Corp Forming nitride film
US4774197A (en) * 1986-06-17 1988-09-27 Advanced Micro Devices, Inc. Method of improving silicon dioxide

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