JPS5524468A - Manufacture of semiconductor - Google Patents
Manufacture of semiconductorInfo
- Publication number
- JPS5524468A JPS5524468A JP9727678A JP9727678A JPS5524468A JP S5524468 A JPS5524468 A JP S5524468A JP 9727678 A JP9727678 A JP 9727678A JP 9727678 A JP9727678 A JP 9727678A JP S5524468 A JPS5524468 A JP S5524468A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substrate
- type
- range
- laser beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Local Oxidation Of Silicon (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE: To partially change semiconductor or metallic layer into insulating layer through the process consisting of injecting the ions of an element which produces insulating material by combining with the component element of said material layer and applying laser beam on said material layer so that the contamination of said insulating layer can be prevented while the heating of said material layer is avoided.
CONSTITUTION: N-type layer 2 is epitaxially formed on N+-type Si substrate 1, said substrate 1 is covered with SiO2 film 3, and polycrystalline Si layer 4 is deposited thereon. Next, nitrogen ions N+ are injected into said layer 4 with injection energy and dose fixed at 30W40KV and 3×1017/cm2 respectively. Thereafter, said layer 4 is changed into Si3N4 layer 4' by applying on N+-ion injection range Nd-YAG laser beam whose application energy density is fixed at 1W5J/cm2. Next, thick field SiO2 films 5 extending up to said substrate 1 are formed at the both ends of the layer 2 through the etching removal of the other portions than said layer 4', of said film 4 and the heat-treatment of said substrate 1, an opening is provided by removing said layer 4' and P-type base range 6 and N-type emitter range 7 are diffusedly formed in said layer 2 and in said base range 6 respectively.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9727678A JPS5524468A (en) | 1978-08-11 | 1978-08-11 | Manufacture of semiconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9727678A JPS5524468A (en) | 1978-08-11 | 1978-08-11 | Manufacture of semiconductor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5524468A true JPS5524468A (en) | 1980-02-21 |
Family
ID=14187991
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9727678A Pending JPS5524468A (en) | 1978-08-11 | 1978-08-11 | Manufacture of semiconductor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5524468A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55150236A (en) * | 1979-05-11 | 1980-11-22 | Mitsubishi Electric Corp | Method of forming oxide film |
JPS55162235A (en) * | 1979-06-01 | 1980-12-17 | Mitsubishi Electric Corp | Forming nitride film |
US4774197A (en) * | 1986-06-17 | 1988-09-27 | Advanced Micro Devices, Inc. | Method of improving silicon dioxide |
-
1978
- 1978-08-11 JP JP9727678A patent/JPS5524468A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55150236A (en) * | 1979-05-11 | 1980-11-22 | Mitsubishi Electric Corp | Method of forming oxide film |
JPS6232616B2 (en) * | 1979-05-11 | 1987-07-15 | Mitsubishi Electric Corp | |
JPS55162235A (en) * | 1979-06-01 | 1980-12-17 | Mitsubishi Electric Corp | Forming nitride film |
US4774197A (en) * | 1986-06-17 | 1988-09-27 | Advanced Micro Devices, Inc. | Method of improving silicon dioxide |
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