JPS54109384A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS54109384A JPS54109384A JP1698778A JP1698778A JPS54109384A JP S54109384 A JPS54109384 A JP S54109384A JP 1698778 A JP1698778 A JP 1698778A JP 1698778 A JP1698778 A JP 1698778A JP S54109384 A JPS54109384 A JP S54109384A
- Authority
- JP
- Japan
- Prior art keywords
- transversal
- emitter
- type
- base
- logic circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To increase the β of transversal and switching transistor, by adding the ion injection process to the normal process, in forming the linear circuit and logic circuit on one semiconductor substrate.
CONSTITUTION: The N+ type implanted region 102 is formed by diffusion on the P type Si substrate 101, the N type layer 103 is epitaxially grown on the entire surface, and the surface is covered with the oxide film 104. Next, to form the emitter of transversal Tr of logic circuit, the base of the color section 105 and switching Tr and color section 106, opening is made on the film 104, N type impurity ions are implanted, performing implanted diffusion. Further, after performing similar work for emitter 107 of transversal Tr of linear circuit and also for the contact 108 of collector of longitudinal Tr, opening is made again on the film 104, forming the injector 109 of transversal Tr of logic circuit and the base 110 of switching Tr by using P type impurity ions. Simultaneously, the collector 111 of transversal Tr of linear circuit, emitter 112, and the base 113 of longitudinal Tr ane formed.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1698778A JPS54109384A (en) | 1978-02-15 | 1978-02-15 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1698778A JPS54109384A (en) | 1978-02-15 | 1978-02-15 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS54109384A true JPS54109384A (en) | 1979-08-27 |
JPS6211511B2 JPS6211511B2 (en) | 1987-03-12 |
Family
ID=11931377
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1698778A Granted JPS54109384A (en) | 1978-02-15 | 1978-02-15 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54109384A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57162357A (en) * | 1981-03-31 | 1982-10-06 | Fujitsu Ltd | Manufacture of semiconductor integrated circuit device |
-
1978
- 1978-02-15 JP JP1698778A patent/JPS54109384A/en active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57162357A (en) * | 1981-03-31 | 1982-10-06 | Fujitsu Ltd | Manufacture of semiconductor integrated circuit device |
JPH0319708B2 (en) * | 1981-03-31 | 1991-03-15 | Fujitsu Ltd |
Also Published As
Publication number | Publication date |
---|---|
JPS6211511B2 (en) | 1987-03-12 |
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