JPS54109384A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS54109384A
JPS54109384A JP1698778A JP1698778A JPS54109384A JP S54109384 A JPS54109384 A JP S54109384A JP 1698778 A JP1698778 A JP 1698778A JP 1698778 A JP1698778 A JP 1698778A JP S54109384 A JPS54109384 A JP S54109384A
Authority
JP
Japan
Prior art keywords
transversal
emitter
type
base
logic circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1698778A
Other languages
Japanese (ja)
Other versions
JPS6211511B2 (en
Inventor
Sadayuki Hamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP1698778A priority Critical patent/JPS54109384A/en
Publication of JPS54109384A publication Critical patent/JPS54109384A/en
Publication of JPS6211511B2 publication Critical patent/JPS6211511B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To increase the β of transversal and switching transistor, by adding the ion injection process to the normal process, in forming the linear circuit and logic circuit on one semiconductor substrate.
CONSTITUTION: The N+ type implanted region 102 is formed by diffusion on the P type Si substrate 101, the N type layer 103 is epitaxially grown on the entire surface, and the surface is covered with the oxide film 104. Next, to form the emitter of transversal Tr of logic circuit, the base of the color section 105 and switching Tr and color section 106, opening is made on the film 104, N type impurity ions are implanted, performing implanted diffusion. Further, after performing similar work for emitter 107 of transversal Tr of linear circuit and also for the contact 108 of collector of longitudinal Tr, opening is made again on the film 104, forming the injector 109 of transversal Tr of logic circuit and the base 110 of switching Tr by using P type impurity ions. Simultaneously, the collector 111 of transversal Tr of linear circuit, emitter 112, and the base 113 of longitudinal Tr ane formed.
COPYRIGHT: (C)1979,JPO&Japio
JP1698778A 1978-02-15 1978-02-15 Semiconductor device Granted JPS54109384A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1698778A JPS54109384A (en) 1978-02-15 1978-02-15 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1698778A JPS54109384A (en) 1978-02-15 1978-02-15 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS54109384A true JPS54109384A (en) 1979-08-27
JPS6211511B2 JPS6211511B2 (en) 1987-03-12

Family

ID=11931377

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1698778A Granted JPS54109384A (en) 1978-02-15 1978-02-15 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS54109384A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57162357A (en) * 1981-03-31 1982-10-06 Fujitsu Ltd Manufacture of semiconductor integrated circuit device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57162357A (en) * 1981-03-31 1982-10-06 Fujitsu Ltd Manufacture of semiconductor integrated circuit device
JPH0319708B2 (en) * 1981-03-31 1991-03-15 Fujitsu Ltd

Also Published As

Publication number Publication date
JPS6211511B2 (en) 1987-03-12

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