JPS57162357A - Manufacture of semiconductor integrated circuit device - Google Patents
Manufacture of semiconductor integrated circuit deviceInfo
- Publication number
- JPS57162357A JPS57162357A JP56046353A JP4635381A JPS57162357A JP S57162357 A JPS57162357 A JP S57162357A JP 56046353 A JP56046353 A JP 56046353A JP 4635381 A JP4635381 A JP 4635381A JP S57162357 A JPS57162357 A JP S57162357A
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- buried layer
- forming
- bipolar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- -1 phosphorus ions Chemical class 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
- H01L27/0244—I2L structures integrated in combination with analog structures
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE:To efficiently manufacture an I<2>L bipolar coexistent type IC having good characteristics by forming selectively an oxidized film, and an insulating film on the film between field films on a semiconductor substrate, and forming a buried layer of different depth by ion implantation. CONSTITUTION:A field oxidized film 22 of SiO2 is, for example, selectively formed on an N type Si substrate 21, a thin SiO2 film 23 is grown by CVD on the surface of a substrate becoming an element forming region therebetween, and an Si3N4 film 24 is selectively formed thereon. Subsequently, phosphorus ions are implanted from the front surface side of the substrate, thereby forming a P<+> type buried layer 25 having high depth is formed on part of the substrate. An I<2>L 12 is formed on the shallow buried layer, and a bipolar element 13 is formed on a deep buried layer. In this manner, buried layers of different depth can be formed by one ion injection, thereby reducting the number of steps and efficiently manufacturing the I<2>L-bipolar coexistent IC with good characteristics.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56046353A JPS57162357A (en) | 1981-03-31 | 1981-03-31 | Manufacture of semiconductor integrated circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56046353A JPS57162357A (en) | 1981-03-31 | 1981-03-31 | Manufacture of semiconductor integrated circuit device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57162357A true JPS57162357A (en) | 1982-10-06 |
| JPH0319708B2 JPH0319708B2 (en) | 1991-03-15 |
Family
ID=12744775
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56046353A Granted JPS57162357A (en) | 1981-03-31 | 1981-03-31 | Manufacture of semiconductor integrated circuit device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57162357A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54109384A (en) * | 1978-02-15 | 1979-08-27 | Nec Corp | Semiconductor device |
| JPS5532025A (en) * | 1978-08-25 | 1980-03-06 | Sharp Corp | Copying machine |
-
1981
- 1981-03-31 JP JP56046353A patent/JPS57162357A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54109384A (en) * | 1978-02-15 | 1979-08-27 | Nec Corp | Semiconductor device |
| JPS5532025A (en) * | 1978-08-25 | 1980-03-06 | Sharp Corp | Copying machine |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0319708B2 (en) | 1991-03-15 |
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