JPS5759373A - I2l semiconductor device and manufacture thereof - Google Patents
I2l semiconductor device and manufacture thereofInfo
- Publication number
- JPS5759373A JPS5759373A JP55134411A JP13441180A JPS5759373A JP S5759373 A JPS5759373 A JP S5759373A JP 55134411 A JP55134411 A JP 55134411A JP 13441180 A JP13441180 A JP 13441180A JP S5759373 A JPS5759373 A JP S5759373A
- Authority
- JP
- Japan
- Prior art keywords
- type
- base
- layer
- substrate
- separating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 3
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE:To obtain the high speed I<2>L device by constituting the I<2>L as a base of a vertical type transistor from a part of an upper epitaxial layer of two upper and lower epitaxial semiconductor layers which are formed on a semicondudtor substrate and have different cnductive types. CONSTITUTION:The n type epitaxial layer 13 is formed on the p type Si substrate 11 via a buried layer 12. Then, an n<+> type well 15 for separating an injector and a base is formed by ion implantation or diffusion with an oxide film 14 as a mask 7. Thereafter a p type Si layer 16 is epitaxially grown on the entire surface, an n<+> region for separating the injector and the base are formed again and connected to the n<+> type well. Finally ions are implanted from the surface of the p type layer 16 so as to reach the p type substrate 11, and an element separating region 20 is formed. In this constitution, since a p type epitaxial layer 19 becomes the base of the inverted vertical type transistor, the low temperature characteristics of hfe is improved, and the low temperature operating speed of the I<2>L is improved.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55134411A JPS5759373A (en) | 1980-09-29 | 1980-09-29 | I2l semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55134411A JPS5759373A (en) | 1980-09-29 | 1980-09-29 | I2l semiconductor device and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5759373A true JPS5759373A (en) | 1982-04-09 |
Family
ID=15127749
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55134411A Pending JPS5759373A (en) | 1980-09-29 | 1980-09-29 | I2l semiconductor device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5759373A (en) |
-
1980
- 1980-09-29 JP JP55134411A patent/JPS5759373A/en active Pending
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