JPS5685847A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS5685847A
JPS5685847A JP16154879A JP16154879A JPS5685847A JP S5685847 A JPS5685847 A JP S5685847A JP 16154879 A JP16154879 A JP 16154879A JP 16154879 A JP16154879 A JP 16154879A JP S5685847 A JPS5685847 A JP S5685847A
Authority
JP
Japan
Prior art keywords
layer
type
region
mos
diffused
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16154879A
Other languages
Japanese (ja)
Inventor
Norio Anzai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP16154879A priority Critical patent/JPS5685847A/en
Publication of JPS5685847A publication Critical patent/JPS5685847A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]
    • H01L27/0244—I2L structures integrated in combination with analog structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To improve the Vth controllability of an MOS by forming a low resistance layer in a lower layer and a high resistance layer in an upper layer as laminated in an epitaxial layer when growing the epitaxial layer on one semiconductor substrate, isolating it into insular state, and using one for an I<2>L element and the other for an MOS element. CONSTITUTION:An n<+> type buried layer 2 is diffused in a p<-> type Si substrate 1, a lower n type layer 3a of low resistance and an upper n<-> type layer 3b of high resistance are laminated and epitaxially grown on the entire surface including the layer 2, and the epitaxial layer is isolated into a layer including the layer 2 and a layer including no layer 2 with a p<+> type region reaching the substrate 1. Subsequently, the epitaxial layer including the layer 2 is used for an I<2>L element, a p<+> type injector region 8, a p type base region 9 and an n<+> type emitter pickup region 13 are respectively diffused therein, and an n<+> type multicollector region 11 is formed in the region 9. The epitaxial layer including no layer 2 is used for an MOS element, and a p type base region 4 and a p type drain region 5 are diffused therein. Thus, the Vth controllability of the MOS can be conducted without decreasing the reverse hFE of the I<2>L.
JP16154879A 1979-12-14 1979-12-14 Semiconductor device and manufacture thereof Pending JPS5685847A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16154879A JPS5685847A (en) 1979-12-14 1979-12-14 Semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16154879A JPS5685847A (en) 1979-12-14 1979-12-14 Semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS5685847A true JPS5685847A (en) 1981-07-13

Family

ID=15737193

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16154879A Pending JPS5685847A (en) 1979-12-14 1979-12-14 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS5685847A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH025566A (en) * 1988-02-12 1990-01-10 Motorola Inc Integrated circuit and its manufacture

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH025566A (en) * 1988-02-12 1990-01-10 Motorola Inc Integrated circuit and its manufacture

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