JPS6453572A - Semiconductor integrated circuit device with bipolar element - Google Patents

Semiconductor integrated circuit device with bipolar element

Info

Publication number
JPS6453572A
JPS6453572A JP21059887A JP21059887A JPS6453572A JP S6453572 A JPS6453572 A JP S6453572A JP 21059887 A JP21059887 A JP 21059887A JP 21059887 A JP21059887 A JP 21059887A JP S6453572 A JPS6453572 A JP S6453572A
Authority
JP
Japan
Prior art keywords
layer
type
trench
emitter
diffused
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21059887A
Other languages
Japanese (ja)
Inventor
Yoshifumi Takada
Masahiro Hatanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP21059887A priority Critical patent/JPS6453572A/en
Publication of JPS6453572A publication Critical patent/JPS6453572A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To achieve a high level of integration while a sufficient driving force is maintained by a method wherein a trench with a required depth is formed in the main surface of a semiconductor substrate and an emitter layer is formed in the inner surface of the trench to provide a base-emitter junction. CONSTITUTION:A trench 7 with a required depth is formed by using a resist layer 16 as a mark in an N<-> type epitaxial layer 3 including an exposed oxide film 5. A P-type low concentration impurity is implanted into the inside of the trench 7 and a part of the N<-> type epitaxial layer 3 and diffused to form a P<-> type base layer 8. An N-type impurity is diffused into the side surface and the bottom surface of the trench 7 from polycrystalline silicon 9 filling the trench 7 to form an N<+> type emitter layer 11 in the P<-> type base layer 8. Then an N-type high concentration impurity is implanted into the exposed N<-> type epitaxial layer 3 through an aperture 15 to form an N<+> type collector layer 17. After the resist layer 16 is removed, a first layer wiring 18 is formed by patterning. Further, an interlayer insulating film 19 is deposited over the whole surface including the first layer wiring 18 and a second layer wiring 21. Finally, a protective film 22 is deposited over the whole surface to complete the device.
JP21059887A 1987-08-25 1987-08-25 Semiconductor integrated circuit device with bipolar element Pending JPS6453572A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21059887A JPS6453572A (en) 1987-08-25 1987-08-25 Semiconductor integrated circuit device with bipolar element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21059887A JPS6453572A (en) 1987-08-25 1987-08-25 Semiconductor integrated circuit device with bipolar element

Publications (1)

Publication Number Publication Date
JPS6453572A true JPS6453572A (en) 1989-03-01

Family

ID=16591977

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21059887A Pending JPS6453572A (en) 1987-08-25 1987-08-25 Semiconductor integrated circuit device with bipolar element

Country Status (1)

Country Link
JP (1) JPS6453572A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0897227A (en) * 1994-09-26 1996-04-12 Nec Corp Bipolar transistor and its manufacture
US12046448B2 (en) 2022-01-26 2024-07-23 Advanced Energy Industries, Inc. Active switch on time control for bias supply

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59220969A (en) * 1983-05-31 1984-12-12 Matsushita Electric Works Ltd Manufacture of planar type transistor
JPS61245572A (en) * 1985-04-24 1986-10-31 Hitachi Ltd Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59220969A (en) * 1983-05-31 1984-12-12 Matsushita Electric Works Ltd Manufacture of planar type transistor
JPS61245572A (en) * 1985-04-24 1986-10-31 Hitachi Ltd Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0897227A (en) * 1994-09-26 1996-04-12 Nec Corp Bipolar transistor and its manufacture
US12046448B2 (en) 2022-01-26 2024-07-23 Advanced Energy Industries, Inc. Active switch on time control for bias supply

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