JPS55107261A - Semiconductor integrated circuit device - Google Patents
Semiconductor integrated circuit deviceInfo
- Publication number
- JPS55107261A JPS55107261A JP1395179A JP1395179A JPS55107261A JP S55107261 A JPS55107261 A JP S55107261A JP 1395179 A JP1395179 A JP 1395179A JP 1395179 A JP1395179 A JP 1395179A JP S55107261 A JPS55107261 A JP S55107261A
- Authority
- JP
- Japan
- Prior art keywords
- region
- type
- transistor
- pnp
- island
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
Abstract
PURPOSE: To increase the current amplification factor of a PNP-transistor in an IC consisting of an NPN-transistor and a PNP-transistor by providing, in the emitter region of the PNP-transistor, a partion of the same conductivity type as the emitter region and having higher impurity concentration than the region
CONSTITUTION: On a P-type silicon substrate 1, an N+-type buried region 2 is diffusion formed, an N-type layer 3 which becomes a base region is epitaxially grown all over the surface and the layer 3 is separated into an island region including the region 2 and an island region not including the region 2 by a P+-type separating region 4 reaching the substrate 1. Next, in the island region 3 not including the region 2, a P-type emitter region 10 and an N+-type base contact region 11 are diffusion formed to form an NPN-transistor, and in the island region 3 including the region 2, a P-type emitter region 5, a P-type collector region 6 and a base contact region 7 are provided to form a PNP-transistor. Further in this constitution, a P+-type region 12 is diffusion formed in the region 5 to make the hFE of the PNP-transistor about two times that of an ordinary constitution one.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1395179A JPS55107261A (en) | 1979-02-08 | 1979-02-08 | Semiconductor integrated circuit device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1395179A JPS55107261A (en) | 1979-02-08 | 1979-02-08 | Semiconductor integrated circuit device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55107261A true JPS55107261A (en) | 1980-08-16 |
Family
ID=11847507
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1395179A Pending JPS55107261A (en) | 1979-02-08 | 1979-02-08 | Semiconductor integrated circuit device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55107261A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56148862A (en) * | 1980-04-21 | 1981-11-18 | Nec Corp | Semiconductor device |
JPS6394676A (en) * | 1986-10-09 | 1988-04-25 | Fujitsu Ltd | Manufacture of semiconductor device |
JPH0218939A (en) * | 1988-07-07 | 1990-01-23 | Sony Corp | Semiconductor device and its manufacture |
-
1979
- 1979-02-08 JP JP1395179A patent/JPS55107261A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56148862A (en) * | 1980-04-21 | 1981-11-18 | Nec Corp | Semiconductor device |
JPS6394676A (en) * | 1986-10-09 | 1988-04-25 | Fujitsu Ltd | Manufacture of semiconductor device |
JPH0218939A (en) * | 1988-07-07 | 1990-01-23 | Sony Corp | Semiconductor device and its manufacture |
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