JPS55107261A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS55107261A
JPS55107261A JP1395179A JP1395179A JPS55107261A JP S55107261 A JPS55107261 A JP S55107261A JP 1395179 A JP1395179 A JP 1395179A JP 1395179 A JP1395179 A JP 1395179A JP S55107261 A JPS55107261 A JP S55107261A
Authority
JP
Japan
Prior art keywords
region
type
transistor
pnp
island
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1395179A
Other languages
Japanese (ja)
Inventor
Masahiro Sekine
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP1395179A priority Critical patent/JPS55107261A/en
Publication of JPS55107261A publication Critical patent/JPS55107261A/en
Pending legal-status Critical Current

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  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To increase the current amplification factor of a PNP-transistor in an IC consisting of an NPN-transistor and a PNP-transistor by providing, in the emitter region of the PNP-transistor, a partion of the same conductivity type as the emitter region and having higher impurity concentration than the region
CONSTITUTION: On a P-type silicon substrate 1, an N+-type buried region 2 is diffusion formed, an N-type layer 3 which becomes a base region is epitaxially grown all over the surface and the layer 3 is separated into an island region including the region 2 and an island region not including the region 2 by a P+-type separating region 4 reaching the substrate 1. Next, in the island region 3 not including the region 2, a P-type emitter region 10 and an N+-type base contact region 11 are diffusion formed to form an NPN-transistor, and in the island region 3 including the region 2, a P-type emitter region 5, a P-type collector region 6 and a base contact region 7 are provided to form a PNP-transistor. Further in this constitution, a P+-type region 12 is diffusion formed in the region 5 to make the hFE of the PNP-transistor about two times that of an ordinary constitution one.
COPYRIGHT: (C)1980,JPO&Japio
JP1395179A 1979-02-08 1979-02-08 Semiconductor integrated circuit device Pending JPS55107261A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1395179A JPS55107261A (en) 1979-02-08 1979-02-08 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1395179A JPS55107261A (en) 1979-02-08 1979-02-08 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS55107261A true JPS55107261A (en) 1980-08-16

Family

ID=11847507

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1395179A Pending JPS55107261A (en) 1979-02-08 1979-02-08 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS55107261A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56148862A (en) * 1980-04-21 1981-11-18 Nec Corp Semiconductor device
JPS6394676A (en) * 1986-10-09 1988-04-25 Fujitsu Ltd Manufacture of semiconductor device
JPH0218939A (en) * 1988-07-07 1990-01-23 Sony Corp Semiconductor device and its manufacture

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56148862A (en) * 1980-04-21 1981-11-18 Nec Corp Semiconductor device
JPS6394676A (en) * 1986-10-09 1988-04-25 Fujitsu Ltd Manufacture of semiconductor device
JPH0218939A (en) * 1988-07-07 1990-01-23 Sony Corp Semiconductor device and its manufacture

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